Plastic Encapsulated Transistor Changzhou Starsea Elec S8550 SOT23 Package Collector Current 500mA
Key Attributes
Model Number:
S8550
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S8550
Package:
SOT-23
Product Description
Product Overview
The S8550 is a plastic-encapsulated transistor designed for general-purpose applications. It is a complementary type to the S8050, offering high stability and reliability. The transistor is housed in a SOT-23 small outline plastic package, suitable for surface mounting. It is rated for a continuous collector current of up to 500 mA and a collector power dissipation of 300 mW.
Product Attributes
- Package Type: SOT-23 Small Outline Plastic Package
- Material: Epoxy
- Flammability Rating: UL 94V-0
- Mounting Position: Any
- Marking: DN:S20G73Z072005A1
- Complementary Type: S8050
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Max | Unit |
|---|---|---|---|---|---|
| Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) | |||||
| Collector-Base Voltage | VCBO | -40 | V | ||
| Collector-Emitter Voltage | VCEO | -25 | V | ||
| Emitter-Base Voltage | VEBO | -5 | V | ||
| Collector Current-Continuous | IC | -500 | mA | ||
| Collector Power Dissipation | PC | 300 | mW | ||
| Junction Temperature | Tj | 150 | |||
| Storage Temperature | Tstg | -55 | +150 | ||
| Thermal resistance From junction to ambient | RJA | 417 | /W | ||
| Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) | |||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100uA, IE=0 | -40 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -25 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100uA, IC=0 | -5 | V | |
| Collector cut-off current | ICEO | VCE=-20V, IB=0 | -100 | nA | |
| Collector cut-off current | ICBO | VCB=-40V, IE=0 | -100 | nA | |
| Emitter cut-off current | IEBO | VEB=-3V, IC=0 | -100 | nA | |
| DC current gain | hFE(1) | VCE=-1V, IC=-50mA | 120 | 400 | |
| hFE(2) | VCE=-1V, IC=-500mA | 50 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=-500mA, IB=-50mA | -0.60 | V | |
| Base -emitter saturation voltage | VBE(sat) | IC=-500mA, IB=-50mA | -1.20 | V | |
| Transition frequency | fT | VCE=-6V, IC=-20mA,f=30MHz | 150 | MHz | |
hFE Classification
| RANK | RANGE |
|---|---|
| L | 120-200 |
| H | 200-350 |
| J | 300-400 |
Package Outline
SOT-23 Plastic surface mounted package.
PCB Design Precautions
Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs.
2204121445_Changzhou-Starsea-Elec-S8550_C2992079.pdf
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