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quality Durable ChipNobo IRG4PF50WPBF-CN transistor featuring low EMI and JEDEC qualification for industrial factory
quality Durable ChipNobo IRG4PF50WPBF-CN transistor featuring low EMI and JEDEC qualification for industrial factory

Durable ChipNobo IRG4PF50WPBF-CN transistor featuring low EMI and JEDEC qualification for industrial

Key Attributes
Model Number: IRG4PF50WPBF-CN
Product Custom Attributes
Td(off):
173ns
Td(on):
80ns
Collector-Emitter Breakdown Voltage (Vces):
900V
Reverse Transfer Capacitance (Cres):
65pF
Input Capacitance(Cies):
9.467nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@250uA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
120A
Output Capacitance(Coes):
132pF
Reverse Recovery Time(trr):
37ns
Switching Energy(Eoff):
800uJ
Turn-On Energy (Eon):
2mJ
Mfr. Part #:
IRG4PF50WPBF-CN
Package:
TO-247-3L
Product Description

Product Overview

This product features advanced Field Stop technology, offering low switching power loss, low switching surge and noise, and low EMI. It boasts a maximum junction temperature of 175C and is qualified according to JEDEC standards for target applications. The product is Pb-free, halogen-free, and RoHS compliant, making it suitable for demanding industrial applications.

Product Attributes

  • Brand: ChipNobo
  • Certifications: JEDEC Qualified, RoHS Compliant
  • Material: Halogen-free Mold Compound
  • Plating: Pb-free Lead Plating

Technical Specifications

ModelVCE (V)IC (A)VCEsat @ Tvj=25C (V)Tvjmax (C)PackageMarking
IRG4PF50WPBF-CN / CI30T90X900301.65175TO247-3L
ItemSymbolConditionsMinTypMaxUnit
Electrical CharacteristicsV(BR)CESVGE= 0V, IC= 0.25mA900--V
ICESVCE= 1000V, VGE= 0V--200A
IGESVCE= 0V, VGE= 20V--200nA
VGE(th)VCE= VGE, IC= 250A5.05.56.0V
VCE(sat)VGE= 15V, IC= 40A, Tvj= 25C-1.652.25V
VCE(sat)VGE= 15V, IC= 40A, Tvj= 175C--2.4V
CiesVCE= 25V, VGE= 0V f= 1MHz-9467-pF
CiesVCE= 25V, VGE= 0V f= 1MHz-9467-pF
CoesVCE= 25V, VGE= 0V f= 1MHz-132-pF
CresVCE= 25V, VGE= 0V f= 1MHz-65-pF
QGVCC= 960V, IC= 40A, VGE= 15V-315-nC
VFIF= 20A, Tvj= 25C-1.93.0V
VFIF= 20A, Tvj= 175C-1.87-V
Switching Characteristics (Tvj= 25C)td(on)VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load-80-ns
trVCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load-22-ns
td(off)VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load-173-ns
tfVCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load-206-ns
EonVCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load-2.0-mJ
EoffVCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load-0.8-mJ
EtsVCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load-2.8-mJ
trrVCC= 720V, IF= 20A, diF/dt= 1900A/s-37-ns
QrrVCC= 720V, IF= 20A, diF/dt= 1900A/s-0.9-C
IrrmVCC= 720V, IF= 20A, diF/dt= 1900A/s-45-A
Switching Characteristics (Tvj= 175C)td(on)VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load-90-ns
trVCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load-30-ns
td(off)VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load-186-ns
tfVCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load-223-ns
EonVCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load-2.2-mJ
EoffVCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load-1.0-mJ
EtsVCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load-3.2-mJ
trrVCC= 720V, IF= 20A, diF/dt= 1900A/s-75-ns
QrrVCC= 720V, IF= 20A, diF/dt= 1900A/s-3.7-C
IrrmVCC= 720V, IF= 20A, diF/dt= 1900A/s-70-A
Thermal ResistanceRth(j-a)---50C/W
Rth(j-c)IGBT--0.29C/W
Rth(j-c)Diode--0.44C/W

Applications

  • Industrial UPS
  • Welding Machine
  • Solar Converters
  • Energy Storage
  • EV Charger

2507011715_ChipNobo-IRG4PF50WPBF-CN_C49274982.pdf

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