SiC Schottky Barrier Rectifier DDF DDF3D08065G with 650V Reverse Voltage and Fast Switching Speeds
Product Overview
The DDF3D08065G is a SiC Schottky Barrier Rectifier designed for high-frequency switching applications. It offers a reverse withstand voltage of 650V, zero reverse recovery current, and fast switching speeds that are unaffected by temperature. These characteristics contribute to very low switching losses, higher efficiency, and reduced reliance on heat sinks, making it ideal for power factor correction, AC/DC converters, motor drives, PV inverters, and wind turbines.
Product Attributes
- Brand: DingDeFeng
- Material: SiC (Silicon Carbide)
- Package Type: TO-263
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Peak repetitive reverse voltage | VRRM | 650 | V | |
| Working peak reverse voltage | VRWM | 650 | V | |
| DC blocking voltage | VDC | 650 | V | |
| Average rectified output current | IF(AV) | TC =25 | 30 | A |
| TC =110 | 14 | |||
| TC =150 | 8 | |||
| Forward repetitive peak current | IFRM | TC=25, tP=10ms,Half Sine Wave | 45 | A |
| TC=110,tP=10ms,Half Sine Wave | 21.5 | |||
| Forward surge current | IFSM | TC=25, tP=10ms,Half Sine Wave | 72 | A |
| TC=110,tP=10ms,Half Sine Wave | 55 | |||
| Power dissipation | Ptot | TC =25 | 90 | W |
| TC =110 | 38 | |||
| Junction temperature | Tj | -55 ~ +175 | ||
| Storage temperature | Tstg | -55 ~ +175 | ||
| Thermal resistance -junction to case | RJC | 2.55 | C/W | |
| Forward voltage | VF | IF = 8 A, Tj=25 | 1.4 ~ 1.8 | V |
| IF = 8 A, Tj=175 | 2.4 | |||
| Reverse current | IR | VR = 650V, Tj=25 | 1 ~ 20 | A |
| VR = 650V, Tj=175 | 200 | |||
| Total capacitive charge | QC | VR = 400V, IF = 8 A, di/dt=500A/s, Tj=25 | 11 | nC |
| Total capacitance | C | VR = 0V, Tj=25, f=1MHz | 580 | pF |
| VR = 200V, Tj=25, f=1MHz | 58 | |||
| VR = 400V, Tj=25, f=1MHz | 42 |
2509111015_DDF-DDF3D08065G_C51901970.pdf
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