P Channel Enhancement Mode MOSFET Diodes DMP6180SK3-13 60V Low On Resistance for Switching Circuits
Key Attributes
Model Number:
DMP6180SK3-13
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
14A
Operating Temperature -:
-55℃~+150℃
RDS(on):
140mΩ@4.5V,8A
Gate Threshold Voltage (Vgs(th)):
2.7V
Reverse Transfer Capacitance (Crss@Vds):
45.5pF@30V
Number:
1 P-Channel
Input Capacitance(Ciss):
984.7pF@30V
Pd - Power Dissipation:
1.7W
Gate Charge(Qg):
17.1nC
Mfr. Part #:
DMP6180SK3-13
Package:
TO-252(DPAK)
Product Description
Product Overview
The Diodes Incorporated DMP6180SK3 is a new generation 60V P-Channel Enhancement Mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high efficiency power management applications, including DC-DC converters and power management functions. It is a "Green" device, being totally lead-free, fully RoHS compliant, and halogen and antimony free. An automotive-compliant part is available under a separate datasheet (DMP6180SK3Q).
Product Attributes
- Brand: Diodes Incorporated
- Product Type: P-Channel Enhancement Mode MOSFET
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Package Material: Molded Plastic, "Green" Molding Compound (UL Flammability Classification Rating 94V-0)
- Terminal Finish: Matte Tin Annealed over Copper Leadframe
- Moisture Sensitivity: Level 1 per J-STD-020
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | -60 | V | VGS = 0V, ID = -250A |
| Static Drain-Source On-Resistance | RDS(ON) | 110 (Max) | m | VGS = -10V, ID = -12A |
| Static Drain-Source On-Resistance | RDS(ON) | 140 (Max) | m | VGS = -4.5V, ID = -8A |
| Continuous Drain Current | ID | -14 (Max @ TC = +25C) | A | VGS = -10V |
| Continuous Drain Current | ID | -12 (Max @ TC = +25C) | A | VGS = -4.5V |
| Pulsed Drain Current | IDM | -25 (Max) | A | 10s Pulse, Duty Cycle = 1% |
| Gate-Source Voltage | VGSS | 20 | V | |
| Total Power Dissipation | PD | 40 (Max @ TC = +25C) | W | Note 5 |
| Thermal Resistance, Junction to Case | RJC | 3.1 (Max @ TC = +25C) | C/W | Steady State (Note 5) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Package | TO252 (DPAK) | |||
| Weight | 0.33 (Approximate) | grams | ||
| Ordering Part Number | DMP6180SK3-13 | TO252 (DPAK), 2,500 Tape & Reel | ||
| Input Capacitance | Ciss | 984.7 (Typ) | pF | VDS = -30V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 58 (Typ) | pF | VDS = -30V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 45.5 (Typ) | pF | VDS = -30V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge | Qg | 8.1 (Typ) | nC | VGS = -4.5V, VDS = -30V, ID = -12A |
| Total Gate Charge | Qg | 17.1 (Typ) | nC | VGS = -10V, VDS = -30V, ID = -12A |
2412251154_DIODES-DMP6180SK3-13_C93034.pdf
Related Products
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
