Low Gate Threshold Voltage MOSFET DMN2005LP4K 7B Diodes Suitable for Space Constrained Applications
Key Attributes
Model Number:
DMN2005LP4K-7B
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
300mA
RDS(on):
450mΩ@2.5V,10mA
Operating Temperature -:
-65℃~+150℃
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
4.8pF
Number:
1 N-channel
Input Capacitance(Ciss):
37.1pF
Pd - Power Dissipation:
400mW
Mfr. Part #:
DMN2005LP4K-7B
Package:
X2-DFN1006-3
Product Description
Product Overview
The Diodes Incorporated DMN2005LP4K is an N-channel enhancement mode MOSFET designed for high-performance applications. It features low on-resistance, a very low gate threshold voltage (0.9V max), and fast switching speeds. This device is ideal for space-constrained designs due to its ultra-small surface mount package and ultra-low profile. It is also ESD protected, totally lead-free, fully RoHS compliant, and a "Green" device, signifying its halogen and antimony-free composition. Suitable for high-reliability applications, it is qualified to AEC-Q101 standards.
Product Attributes
- Brand: Diodes Incorporated
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Certifications: Qualified to AEC-Q101 Standards
- Material: Molded Plastic, Green Molding Compound; UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: NiPdAu over Copper leadframe; Solderable per MIL-STD-202, Method 208
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Document Number | DMN2005LP4K | DS30799 Rev. 8 - 2 | ||
| Release Date | May 2015 | |||
| Case | X2-DFN1006-3 | |||
| Weight (Approximate) | 0.001 | grams | ||
| Drain-Source Voltage | VDSS | 20 | V | @TA = +25C unless otherwise specified. |
| Gate-Source Voltage | VGSS | 10 | V | @TA = +25C unless otherwise specified. |
| Drain Current Continuous (per element) | ID | 300 | mA | @TA = +25C unless otherwise specified. (Note 5) |
| Drain Current Pulsed (per element) | ID | 350 | mA | @TA = +25C unless otherwise specified. (Note 6) |
| Total Power Dissipation (per element) | PD | 400 | mW | @TA = +25C unless otherwise specified. (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 280 | C/W | @TA = +25C unless otherwise specified. (Note 5) |
| Operating and Storage Temperature Range | TJ, TSTG | -65 to +150 | C | |
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 100A (Note 7) |
| Zero Gate Voltage Drain Current | IDSS | 10 | A | VDS = 17V, VGS = 0V (Note 7) |
| Gate-Source Leakage | IGSS | 5 | A | VGS = 8V, VDS = 0V (Note 7) |
| Gate Threshold Voltage | VGS(th) | 0.53 Typ 0.9 Max | V | VDS = VGS, ID = 100A (Note 7) |
| Static Drain-Source On-Resistance | RDS (ON) | 0.35 Typ (VGS=4V, ID=10mA) 0.4 Typ (VGS=2.7V, ID=200mA) 0.45 Typ (VGS=2.5V, ID=10mA) 0.55 Typ (VGS=1.8V, ID=200mA) 0.65 Typ (VGS=1.5V, ID=1mA) 1.5 Typ (VGS=4V, ID=10mA) 1.7 Typ (VGS=2.7V, ID=200mA) 1.7 Typ (VGS=2.5V, ID=10mA) 3.5 Typ (VGS=1.8V, ID=200mA) 3.5 Typ (VGS=1.5V, ID=1mA) | (Note 7) | |
| Forward Transfer Admittance | Yfs | 40 Typ | mS | VDS = 3V, ID = 10mA (Note 7) |
| Input Capacitance | Ciss | 37.1 Typ | pF | VDS = 10V, VGS = 0V, f = 1.0MHz (Note 7) |
| Output Capacitance | Coss | 6.5 Typ | pF | VDS = 10V, VGS = 0V, f = 1.0MHz (Note 7) |
| Reverse Transfer Capacitance | Crss | 4.8 Typ | pF | VDS = 10V, VGS = 0V, f = 1.0MHz (Note 7) |
| Turn-On Time | ton | 4.06 Typ | nS | VDD = 10V, Rl = 47, VGEN = 4.5V, RGEN = 10. (Note 7) |
| Turn-Off Time | toff | 13.7 Typ | nS | VDD = 10V, Rl = 47, VGEN = 4.5V, RGEN = 10. (Note 7) |
| Ordering Information Part Number | DMN2005LP4K-7 | DN Marking, 7" Reel, 8mm Tape Width, 3,000 per reel | ||
| Ordering Information Part Number | DMN2005LP4K-7B | DN Marking, 7" Reel, 8mm Tape Width, 10,000 per reel | ||
| Package Outline Dimensions (mm) | A | 0.40 | mm | |
| Package Outline Dimensions (mm) | A1 | 0.03 | mm | |
| Package Outline Dimensions (mm) | b | 0.15 | mm | |
| Package Outline Dimensions (mm) | b2 | 0.50 | mm | |
| Package Outline Dimensions (mm) | D | 1.00 | mm | |
| Package Outline Dimensions (mm) | E | 0.60 | mm | |
| Package Outline Dimensions (mm) | e | 0.35 | mm | |
| Package Outline Dimensions (mm) | L1 | 0.25 | mm | |
| Package Outline Dimensions (mm) | L2 | 0.25 | mm | |
| Package Outline Dimensions (mm) | L3 | 0.40 | mm | |
| Package Outline Dimensions (mm) | z | 0.05 | mm |
2303231500_DIODES-DMN2005LP4K-7B_C5438909.pdf
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