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quality Surface Mount Technology Compatible DIODES ABS10B-13 Bridge Rectifier for Rectification Performance factory
quality Surface Mount Technology Compatible DIODES ABS10B-13 Bridge Rectifier for Rectification Performance factory

Surface Mount Technology Compatible DIODES ABS10B-13 Bridge Rectifier for Rectification Performance

Key Attributes
Model Number: ABS10B-13
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.1V@1.5A
Current - Rectified:
1.5A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
ABS10B-13
Package:
SMD-4P
Product Description

Product Overview

The ABS10B is a new product 1.5A surface mount glass passivated bridge rectifier. It is suitable for AC to DC bridge full wave rectification in various applications including SMPS, LED lighting, adapters, battery chargers, home appliances, office equipment, and telecommunication systems. Key features include glass passivated die construction, a miniature package for space saving, high current capability, suitability for SMT manufacturing, and a low forward voltage drop. This device is lead-free, RoHS compliant, and halogen and antimony-free, making it a "Green" device.

Product Attributes

  • Brand: Diodes Incorporated
  • Origin: Not specified
  • Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
  • Color: Not specified
  • Certifications: RoHS Compliant, Halogen and Antimony Free (Green Device)
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Lead Free Plating (Matte Tin Finish)

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Maximum RatingsVRRM, VRWM, VR1000V
VR(RMS)700V
IO @ TA = +40C1.5ASingle phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
IFSM (8.3ms)50ANon-Repetitive Peak Forward Surge Current
I2t (1ms < t < 8.3ms)10.4ASRating for Fusing
RJA (Per Element)62.5C/WTypical Thermal Resistance, Junction to Ambient (Note 6)
RJL (Per Element)25C/WTypical Thermal Resistance, Junction to Lead
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C
Electrical CharacteristicsV(BR)R (Per Element)1,000VIR = 5A
VF (Per Element)1.1VIF = 1.5A, TA = +25C
IR (Per Element)5AVR = 1,000V, TA = +25C
CT (Per Element)17pFVR = 4V, f = 1.0MHz

2202241530_DIODES-ABS10B-13_C442623.pdf

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