Low Leakage Current Surface Mount Bridge Rectifier Diodes DBF1510U-13 Designed for Power Conversion
Key Attributes
Model Number:
DBF1510U-13
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
70A
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1V@1.5A
Current - Rectified:
1.5A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
DBF1510U-13
Package:
DBF
Product Description
Product Overview
The DBF1510U is a 1.5A surface mount bridge rectifier designed for AC to DC full wave rectification. It is suitable for a wide range of applications including SMPS, LED lighting, adapters, battery chargers, home appliances, office equipment, and telecommunication systems. Its glass passivated die construction, miniature package, low leakage current, and low forward voltage drop make it ideal for SMT manufacturing. The device offers a surge overload rating of up to 70A peak and is RoHS compliant, Halogen and Antimony free (Green Device).
Product Attributes
- Brand: Diodes Incorporated
- Product Type: Surface Mount Bridge Rectifier
- Case Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Lead Free Plating (Matte Tin Finish)
- Compliance: RoHS Compliant, Halogen and Antimony Free (Green Device)
- Origin: Not specified in the document
- Color: Not specified in the document
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Product Summary | ||||
| VRRM (V) | VRRM | 1,000 | V | @ TA = +25C |
| IO (A) | IO | 1.5 | A | @ TA = +25C |
| VF (V) | VF | 1.0 | V | @ TA = +25C |
| IR (A) | IR | 5 | A | @ TA = +25C |
| Maximum Ratings | ||||
| Peak Repetitive Reverse Voltage | VRRM, VRWM, VR | 1000 | V | Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. |
| RMS Reverse Voltage | VR(RMS) | 700 | V | |
| Average Rectified Output Current | IO | 1.5 | A | @ TC = +110C (Note 5) |
| Non-Repetitive Peak Forward Surge Current (8.3ms Single Half Sine-Wave) | IFSM | 70 | A | Superimposed on Rated Load |
| I2t Rating for Fusing (1ms < t < 8.3ms) | I2t | 20.34 | AS | |
| Thermal Characteristics | ||||
| Typical Thermal Resistance, Junction to Ambient (Per Element) | RJA | 50 | C/W | (Note 6) |
| Typical Thermal Resistance, Junction to Case (Per Element) | RJC | 10 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Reverse Breakdown Voltage (Per Element) | V(BR)R | 1000 | V | Min, IR = 5A (Note 7) |
| Forward Voltage (Per Element) | VF | 0.87 - 1.0 | V | IF = 0.75A, TA = +25C; IF = 1.5A, TA = +25C (Typ/Max) |
| Leakage Current (Per Element) | IR | 0.03 - 500 | A | VR = 1,000V, TA = +25C; VR = 1,000V, TA = +125C (Typ/Max) (Note 7) |
| Total Capacitance (Per Element) | CT | 25 | pF | Typ, VR = 4V, f = 1.0MHz |
2308101652_DIODES-DBF1510U-13_C5245151.pdf
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