Power Management N Channel MOSFET DIODES DMN24H3D5L 7 Ideal for Battery Operated Systems and Drivers
Key Attributes
Model Number:
DMN24H3D5L-7
Product Custom Attributes
Drain To Source Voltage:
240V
Current - Continuous Drain(Id):
480mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@10V,0.48A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
8pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
188pF@25V
Pd - Power Dissipation:
760mW
Gate Charge(Qg):
6.6nC
Mfr. Part #:
DMN24H3D5L-7
Package:
SOT-23
Product Description
Product Overview
The Diodes Incorporated DMN24H3D5L is a new generation N-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for DC-DC converters, power management functions, battery-operated systems, solid-state relays, and various driver applications (relays, solenoids, lamps, displays, etc.).
Product Attributes
- Brand: Diodes Incorporated
- Product Line: DMN24H3D5L
- Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage (VBRDSS) | V(BR)DSS | 240 | V | TA = +25C |
| On-Resistance (RDS(ON)) | RDS(ON) | 3.5 | VGS = 10V | |
| On-Resistance (RDS(ON)) | RDS(ON) | 3.5 | VGS = 4.5V | |
| On-Resistance (RDS(ON)) | RDS(ON) | 6.0 | VGS = 3.3V | |
| Continuous Drain Current (ID) | ID | 0.48 | A | TA = +25C, VGS = 10V |
| Continuous Drain Current (ID) | ID | 0.48 | A | TA = +25C, VGS = 4.5V |
| Continuous Drain Current (ID) | ID | 0.37 | A | TA = +25C, VGS = 3.3V |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 240 | V | @TA = +25C, unless otherwise specified. |
| Gate-Source Voltage | VGSS | 20 | V | @TA = +25C, unless otherwise specified. |
| Continuous Drain Current (Note 6) | ID | 0.48 / 0.39 | A | VGS = 10V, Steady State, TA = +25C / +70C |
| Pulsed Drain Current (10s pulse, duty cycle 1%) | IDM | 1.9 | A | @TA = +25C, unless otherwise specified. |
| Maximum Body Diode Continuous Current (Note 6) | IS | 1.5 | A | @TA = +25C, unless otherwise specified. |
| Thermal Characteristics | ||||
| Total Power Dissipation (Note 5) | PD | 0.76 / 1.26 | W | @TA = +25C, unless otherwise specified. (Note 6) |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 163 / 99 | C/W | @TA = +25C, unless otherwise specified. (Note 6) |
| Thermal Resistance, Junction to Case (Note 6) | RJC | 31 | C/W | @TA = +25C, unless otherwise specified. |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to 150 | C | @TA = +25C, unless otherwise specified. |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BV DSS | 240 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | 1.0 | A | VDS = 192V, VGS = 0V |
| Gate-Body Leakage | IGSS | 100 | nA | VGS = 20V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 1.0 / 1.95 / 2.5 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(ON) | 3.5 | VGS = 10V, ID = 0.3A | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.5 | VGS = 4.5V, ID = 0.2A | |
| Static Drain-Source On-Resistance | RDS(ON) | 6.0 | VGS = 3.3V, ID = 0.1A | |
| Diode Forward Voltage | VSD | 0.7 / 1.2 | V | VGS = 0V, IS = 0.3A |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 188 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 11 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 8 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Gate Resistance | Rg | 3.86 | VDS = 0V, VGS = 0V, f = 1.0MHz | |
| Total Gate Charge | Qg | 6.6 | nC | VDS = 192V, VGS = 10V, ID = 0.5A |
| Gate-Source Charge | Qgs | 0.8 | nC | VDS = 192V, VGS = 10V, ID = 0.5A |
| Gate-Drain Charge | Qgd | 2.1 | nC | VDS = 192V, VGS = 10V, ID = 0.5A |
| Turn-On Delay Time | tD(on) | 2.3 | nS | VDS = 60V, RL =200, VGS = 10V, RG = 25 |
| Turn-On Rise Time | tr | 2.0 | nS | VDS = 60V, RL =200, VGS = 10V, RG = 25 |
| Turn-Off Delay Time | tD(off) | 21 | nS | VDS = 60V, RL =200, VGS = 10V, RG = 25 |
| Turn-Off Fall Time | tf | 7.2 | nS | VDS = 60V, RL =200, VGS = 10V, RG = 25 |
| Mechanical Data | ||||
| Case | SOT23 | |||
| Weight | 0.008 | grams (Approximate) | ||
| Ordering Information | ||||
| Part Number | Case | Packaging | ||
| DMN24H3D5L-7 | SOT23 | 3,000/Tape & Reel | ||
| DMN24H3D5L-13 | SOT23 | 10,000/Tape & Reel | ||
2005271003_DIODES-DMN24H3D5L-7_C460052.pdf
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