86--136 6733 2386
quality Single Phase Diode Bridge Rectifier DIOTEC GBI25D UL Recognized RoHS Compliant 25 Amp Rectification factory
quality Single Phase Diode Bridge Rectifier DIOTEC GBI25D UL Recognized RoHS Compliant 25 Amp Rectification factory
quality Single Phase Diode Bridge Rectifier DIOTEC GBI25D UL Recognized RoHS Compliant 25 Amp Rectification factory

Single Phase Diode Bridge Rectifier DIOTEC GBI25D UL Recognized RoHS Compliant 25 Amp Rectification

Key Attributes
Model Number: GBI25D
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
340A
Operating Junction Temperature Range:
-50℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.1V@12.5A
Current - Rectified:
25A
Voltage - DC Reverse(Vr):
200V
Mfr. Part #:
GBI25D
Package:
GBI
Product Description

Product Overview

The GBI25A to GBI25M series are single-phase diode bridge rectifiers designed for 50/60 Hz mains rectification in power supplies for commercial and industrial applications. These rectifiers feature four diodes in a bridge configuration, offering UL recognition, free-standing or heatsink assembly, and compliance with RoHS and REACH standards. Available with optional AEC-Q101 compliance (-Q suffix) or qualification (-AQ suffix), these devices provide efficient rectification with a maximum rectified output current of up to 25 A with forced cooling.

Product Attributes

  • Brand: Diotec Semiconductor AG
  • Product Series: GBI25A ... GBI25M
  • Type: Single Phase Diode Bridge Rectifier
  • Certifications: UL recognized (File E175067), Compliant to RoHS (exemp. 7a), REACH, Conflict Minerals
  • Optional Compliance: -Q: AEC-Q101 compliant, -AQ: in AEC-Q101 qualification
  • Packaging: Packed in cardboard trays; On request: packed in tubes (suffix -T)
  • Material: Case material UL 94V-0
  • Environmental: Halogen FREE

Technical Specifications

Specification Value Unit Notes
Average Forward Current (IFAV) 25 A Max. rectified output current with forced cooling (TC = 80C, R-load)
Average Forward Current (IFAV) 4.2 A Max. rectified output current free standing (TA = 50C, R-load)
Average Forward Current (IFAV) 3.5 A Max. rectified output current free standing (TA = 50C, C-load)
Forward Voltage (VF) ~ 0.92 V Typical at Tj = 25C, IF = 12.5 A
Maximum Junction Temperature (Tjmax) 150 C Operating junction/storage temperature
Repetitive Peak Reverse Voltage (VRRM) 50...1000 V Range for models GBI25A to GBI25M
Peak Forward Surge Current (IFSM) 300 / 340 A Half sine-wave 50 Hz (10 ms) / 60 Hz (8.3 ms)
Reverse Recovery Time (trr) ~ 1500 ns Typical at IF = 0.5 A, IR = 1 A to 0.25 A
Weight approx. 7 g
Solder & assembly conditions 260C/10s
MSL N/A
Operating junction/storage temperature -50...+150 C Tj/S
Admissible torque for mounting M3 7 10% lb.in.
Admissible torque for mounting M3 0.8 10% Nm
Leakage current (IR) < 5 A Typical at Tj = 25C, VR = VRRM
Typical junction capacitance (Cj) 85 pF Typical at VR = 4 V
Typical thermal resistance junction to ambient (RthA) 12 K/W Per device, leads kept at ambient temperature at 5 mm distance from case
Typical thermal resistance junction to case (RthC) 1.2 K/W Per device
Rating for fusing (i2t) 450 As t < 10 ms
Model Max. alternating input voltage (VVRMS) Repetitive peak reverse voltage (VRRM)
GBI25A 35 50
GBI25B 70 100
GBI25D 140 200
GBI25G 280 400
GBI25J 420 600
GBI25K 560 800
GBI25M 700 1000

2504101957_DIOTEC-GBI25D_C3590282.pdf

Related Products
quality General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage factory
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
quality power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching factory
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
quality Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage factory
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
quality 400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications factory
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.