SOD123 Zener Diode DOWO BZT52C5V6 Featuring Precise Voltage Regulation and High Stability Performance
Key Attributes
Model Number:
BZT52C5V6
Product Custom Attributes
Impedance(Zzt):
40Ω
Zener Voltage(Range):
5.32V~5.88V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
5.6V
Impedance(Zzk):
400Ω
Mfr. Part #:
BZT52C5V6
Package:
SOD-123
Product Description
Product Overview
The SOD-123 Plastic-Encapsulate Zener Diode offers low Zener impedance, a power dissipation of 500mW, and high stability and reliability. It is designed for general-purpose applications requiring precise voltage regulation.
Product Attributes
- Package: SOD-123 Small Outline Plastic Package
- Polarity: Color band denotes cathode end
- Epoxy UL: 94V-0
- Mounting Position: Any
Technical Specifications
| Device Marking | Nominal Zener Voltage (V) | Zener Voltage Range (V) | Test Current (mA) | Max Zener Impedance () | Max Reverse Current (uA) | Typical Temperature Coefficient (mV/) |
| WX | 2.4 | 2.28 - 2.52 | 5 | 100 | 50 | -3.5 |
| W1 | 2.7 | 2.57 - 2.84 | 5 | 100 | 20 | -3.5 |
| W2 | 3.0 | 2.85 - 3.15 | 5 | 95 | 10 | -3.5 |
| W3 | 3.3 | 3.14 - 3.47 | 5 | 95 | 5 | -3.5 |
| W4 | 3.6 | 3.42 - 3.78 | 5 | 90 | 5 | -3.5 |
| W5 | 3.9 | 3.71 - 4.10 | 5 | 90 | 3 | -3.5 |
| W6 | 4.3 | 4.09 - 4.52 | 5 | 90 | 3 | -3.5 |
| W7 | 4.7 | 4.47 - 4.94 | 5 | 80 | 3 | -3.5 |
| W8 | 5.1 | 4.85 - 5.36 | 5 | 60 | 2 | -2.7 |
| W9 | 5.6 | 5.32 - 5.88 | 5 | 40 | 1 | -2.0 |
| WA | 6.2 | 5.89 - 6.51 | 5 | 10 | 3 | 0.4 |
| WB | 6.8 | 6.46 - 7.14 | 5 | 15 | 2 | 1.2 |
| WC | 7.5 | 7.13 - 7.88 | 5 | 15 | 1 | 2.5 |
| WD | 8.2 | 7.79 - 8.61 | 5 | 15 | 0.7 | 3.2 |
| WE | 9.1 | 8.65 - 9.56 | 5 | 15 | 0.5 | 3.8 |
| WF | 10 | 9.50 - 10.50 | 5 | 20 | 0.2 | 4.5 |
| WG | 11 | 10.45 - 11.55 | 5 | 20 | 0.1 | 5.4 |
| WH | 12 | 11.40 - 12.60 | 5 | 25 | 0.1 | 6.0 |
| WI | 13 | 12.35 - 13.65 | 5 | 30 | 0.1 | 7.0 |
| WJ | 15 | 14.25 - 15.75 | 5 | 30 | 0.1 | 9.2 |
| WK | 16 | 15.20 - 16.80 | 5 | 40 | 0.1 | 10.4 |
| WL | 18 | 17.10 - 18.90 | 5 | 45 | 0.1 | 12.4 |
| WM | 20 | 19.00 - 21.00 | 5 | 55 | 0.1 | 14.4 |
| WN | 22 | 20.90 - 23.10 | 5 | 55 | 0.1 | 16.4 |
| WO | 24 | 22.80 - 25.20 | 5 | 70 | 0.1 | 18.4 |
| WP | 27 | 25.65 - 28.35 | 2 | 80 | 0.1 | 21.4 |
| WQ | 30 | 28.50 - 31.50 | 2 | 80 | 0.1 | 24.4 |
| WR | 33 | 31.35 - 34.65 | 2 | 80 | 0.1 | 27.4 |
| WS | 36 | 34.20 - 37.80 | 2 | 90 | 0.1 | 30.4 |
| WT | 39 | 37.05 - 40.95 | 2 | 130 | 0.1 | 33.4 |
| WU | 43 | 40.85 - 45.15 | 2 | 100 | 0.1 | 10.0 |
| WV | 47 | 44.65 - 49.35 | 2 | 100 | 0.1 | 10.0 |
| WW | 51 | 48.45 - 53.55 | 2 | 100 | 0.1 | 10.0 |
| Parameter | Symbol | Value | Unit |
| Power Dissipation | Pd | 500 | mW |
| Forward Voltage @IF=10mA | Vf | 0.9 | V |
| Storage temperature range | Ts | -65 to +150 |
2410121632_DOWO-BZT52C5V6_C7544538.pdf
Related Products
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
