AEC Q101 Qualified P Channel Transistor Diodes DMP2240UW 7 with Low Leakage and Lead Free Compliance
Key Attributes
Model Number:
DMP2240UW-7
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 P-Channel
Input Capacitance(Ciss):
320pF@16V
Pd - Power Dissipation:
250mW
Mfr. Part #:
DMP2240UW-7
Package:
SOT-323
Product Description
Product Overview
DMP2240UW is a P-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features low on-resistance at different gate-source voltages (-4.5V, -2.5V, -1.8V), a very low gate threshold voltage (VGS(th) 1V), low input capacitance, and fast switching speeds. The device also offers low input/output leakage and is lead-free and RoHS compliant. It is qualified to AEC-Q101 standards for high reliability.Product Attributes
- Brand: Diodes Incorporated
- Product Type: P-Channel Enhancement Mode Field Effect Transistor
- Material: Molded Plastic, Green Molding Compound
- Certifications: AEC-Q101 Qualified
- Compliance: Lead Free By Design/RoHS Compliant, "Green" Device
Technical Specifications
| Characteristic | Symbol | Value | Units | Test Condition |
|---|---|---|---|---|
| Features | ||||
| Low On-Resistance @ VGS = -4.5V | 150 | m | ||
| Low On-Resistance @ VGS = -2.5V | 200 | m | ||
| Low On-Resistance @ VGS = -1.8V | 240 | m | ||
| Very Low Gate Threshold Voltage | VGS(th) | 1 | V | |
| Mechanical Data | ||||
| Case | SOT-323 | |||
| Weight | 0.006 | grams (approximate) | ||
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | -20 | V | @TA = 25C |
| Gate-Source Voltage | VGSS | 12 | V | @TA = 25C |
| Drain Current (Note 1) TA = 25C | ID | -1.5 | A | |
| Drain Current (Note 1) TA = 70C | ID | -1.0 | A | |
| Pulsed Drain Current | IDM | -5 | A | @TA = 25C |
| Total Power Dissipation (Note 1) | PD | 250 | mW | @TA = 25C |
| Thermal Resistance, Junction to Ambient | RJA | 500 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250A |
| Zero Gate Voltage Drain Current TJ = 25C | IDSS | -1.0 | A | VDS = -20V, VGS = 0V |
| Zero Gate Voltage Drain Current TJ = 125C | IDSS | -5.0 | A | VDS = -20V, VGS = 0V |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 12V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | -0.45 to -1.0 | V | VDS = VGS, ID = -250A |
| Static Drain-Source On-Resistance VGS = -4.5V | RDS (ON) | 92 to 180 | m | ID = -2.0A |
| Static Drain-Source On-Resistance VGS = -2.5V | RDS (ON) | 134 to 200 | m | ID = -1.5A |
| Static Drain-Source On-Resistance VGS = -1.8V | RDS (ON) | 180 to 240 | m | ID = -0.5A |
| Forward Transconductance | gFS | 3.1 | S | VDS = -10V, ID = -810mA |
| Diode Forward Voltage | VSD | -0.9 | V | VGS = 0V, IS = -0.5A |
| Input Capacitance | Ciss | 320 | pF | VDS = -16V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 80 | pF | VDS = -16V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 60 | pF | VDS = -16V, VGS = 0V, f = 1.0MHz |
| Turn-On Delay Time | tD(on) | 12.5 | ns | VDS = -10V, VGS = -4.5V, RL = 10, RG = 1.0 |
| Turn-On Rise Time | tr | 10.3 | ns | VDS = -10V, VGS = -4.5V, RL = 10, RG = 1.0 |
| Turn-Off Delay Time | tD(off) | 46.5 | ns | VDS = -10V, VGS = -4.5V, RL = 10, RG = 1.0 |
| Turn-Off Fall Time | tf | 22.2 | ns | VDS = -10V, VGS = -4.5V, RL = 10, RG = 1.0 |
| Ordering Information | ||||
| Part Number | DMP2240UW-7 | SOT-323, 3000/Tape & Reel | ||
2002171631_DIODES-DMP2240UW-7_C459548.pdf
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