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quality Low RDS ON 30V N channel MOSFET DIODES DMT32M5LPS 13 designed for power management and load switching factory
quality Low RDS ON 30V N channel MOSFET DIODES DMT32M5LPS 13 designed for power management and load switching factory

Low RDS ON 30V N channel MOSFET DIODES DMT32M5LPS 13 designed for power management and load switching

Key Attributes
Model Number: DMT32M5LPS-13
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.6mΩ@10V;2.3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@1mA
Reverse Transfer Capacitance (Crss@Vds):
186pF
Number:
-
Output Capacitance(Coss):
1.267nF
Input Capacitance(Ciss):
3.944nF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
34nC@4.5V;68nC@10V
Mfr. Part #:
DMT32M5LPS-13
Package:
PowerDI5060-8
Product Description

Product Overview

The DMT32M5LPS is a 30V N-channel enhancement mode MOSFET designed for high performance in power management and load switch applications. It offers minimized RDS(ON) for superior switching efficiency and reduced on-state losses. This device is ideal for use in DC-DC converters and load switches, featuring a thermally efficient package with a low profile, making it suitable for thin applications.

Product Attributes

  • Brand: Diodes Incorporated
  • Package Material: Molded Plastic, Green Molding Compound
  • Flammability Classification: UL 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Finish: Matte Tin Annealed over Copper Leadframe
  • Certifications: RoHS Compliant, Halogen and Antimony Free (Green Device)

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Product Summary
Breakdown Voltage (Drain-Source) BVDSS 30 V
On-Resistance (RDS(ON)) RDS(ON) 2.0 m VGS = 10V, TC = +25C
On-Resistance (RDS(ON)) RDS(ON) 3.0 m VGS = 4.5V, TC = +25C
Continuous Drain Current (ID) ID 150 A TC = +25C
Continuous Drain Current (ID) ID 100 A TC = +25C (VGS = 4.5V)
Maximum Ratings
Drain-Source Voltage VDSS 30 V @TC = +25C, unless otherwise specified.
Gate-Source Voltage VGSS 20 V @TC = +25C, unless otherwise specified.
Continuous Drain Current, VGS = 10V (Steady State) ID 150 A TC = +25C
Continuous Drain Current, VGS = 10V (Steady State) ID 120 A TC = +70C
Maximum Continuous Body Diode Forward Current IS 80 A (Note 6)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) IDM 350 A
Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) ISM 350 A
Avalanche Current, L = 0.1mH IAS 50 A
Avalanche Energy, L = 0.1mH EAS 140 mJ
Thermal Characteristics
Total Power Dissipation (Note 5) PD 3.2 W TA = +25C
Thermal Resistance, Junction to Ambient (Note 5) RJA 54 C/W
Total Power Dissipation (Note 6) PD 100 W TC = +25C
Thermal Resistance, Junction to Case (Note 6) RJC 1.5 C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current IDSS 1 A VDS = 24V, VGS = 0V
Gate-Source Leakage IGSS 100 nA VGS = 16V, VDS = 0V
Gate Threshold Voltage VGS(TH) 1 - 3 V VDS = VGS, ID = 1mA
Static Drain-Source On-Resistance RDS(ON) 1.6 - 2.0 m VGS = 10V, ID = 30A
Static Drain-Source On-Resistance RDS(ON) 2.3 - 3.0 m VGS = 4.5V, ID = 30A
Diode Forward Voltage VSD 0.8 - 1.1 V VGS = 0V, IS = 30A
Input Capacitance Ciss 3944 pF VDS = 25V, VGS = 0V, f = 1MHz
Output Capacitance Coss 1267 pF VDS = 25V, VGS = 0V, f = 1MHz
Reverse Transfer Capacitance Crss 186 pF VDS = 25V, VGS = 0V, f = 1MHz
Gate Resistance Rg 0.6 VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V) Qg 34 nC VDS = 15V, ID = 20A
Total Gate Charge (VGS = 10V) Qg 68 nC VDS = 15V, ID = 20A
Gate-Source Charge Qgs 8 nC VDS = 15V, ID = 20A
Gate-Drain Charge Qgd 15 nC VDS = 15V, ID = 20A
Turn-On Delay Time tD(ON) 7.2 ns VDD = 15V, VGS = 10V, ID = 15A, RG = 3
Turn-On Rise Time tR 13.2 ns VDD = 15V, VGS = 10V, ID = 15A, RG = 3
Turn-Off Delay Time tD(OFF) 37.5 ns VDD = 15V, VGS = 10V, ID = 15A, RG = 3
Turn-Off Fall Time tF 23.9 ns VDD = 15V, VGS = 10V, ID = 15A, RG = 3
Body Diode Reverse Recovery Time tRR 28.7 ns IS = 15A, di/dt = 500A/s
Body Diode Reverse Recovery Charge QRR 45.8 nC IS = 15A, di/dt = 500A/s
Mechanical Data
Package PowerDI5060-8
Weight 0.097 grams (Approximate)
Ordering Information
Part Number DMT32M5LPS-13 PowerDI5060-8 2,500 Tape & Reel
Part Number DMT32M5LPS-13 PowerDI5060-8/SWP (Type UX) 2,500 Tape & Reel

2412251040_DIODES-DMT32M5LPS-13_C268031.pdf

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