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quality NPN Transistor SOT23 Package Doeshare S8050 Power Dissipation 300mW Suitable Electronic Applications factory
quality NPN Transistor SOT23 Package Doeshare S8050 Power Dissipation 300mW Suitable Electronic Applications factory

NPN Transistor SOT23 Package Doeshare S8050 Power Dissipation 300mW Suitable Electronic Applications

Key Attributes
Model Number: S8050
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S8050
Package:
SOT-23
Product Description

Product Overview

The S8050 is an NPN transistor in a SOT-23 plastic-encapsulated package. It offers a power dissipation of 300mW, high stability, and high reliability, making it a complementary component to the S8550. This general-purpose transistor is suitable for various electronic applications.

Product Attributes

  • Brand: DOESHARE
  • Package Type: SOT-23 Small Outline Plastic Package
  • Encapsulation: Plastic
  • Flame Retardancy: Epoxy UL: 94V-0
  • Mounting Position: Any
  • Marking: J3Y

Technical Specifications

Parameter Symbol Test Condition Min Max Unit
Maximum Ratings & Thermal Characteristics (TA = 25C unless otherwise noted)
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current-Continuous IC 500 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
Thermal resistance From junction to ambient RJA 417 /W
Electrical Characteristics (TA = 25C unless otherwise noted)
Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100uA, IC=0 5 V
Collector cut-off current ICEO VCE=20V, IB=0 100 nA
Collector cut-off current ICBO VCB=40V, IE=0 100 nA
Emitter cut-off current IEBO VEB=5V, IC=0 100 nA
DC current gain hFE(1) VCE=1V, IC=50mA 120 400
DC current gain hFE(2) VCE=1V, IC=500mA 50
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.60 V
Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.20 V
Transition frequency fT VCE=6V, IC=20mA,f=30MHz 150 MHz

CLASSIFICATION OF hFE(1)

RANK RANGE
L 120-200
H 200-350
J 300-400

2410121714_Doeshare-S8050_C2931719.pdf

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