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quality NPN Transistor ElecSuper MMBTA06 with 80V Collector Base Voltage and 500mA Continuous Collector Current factory
quality NPN Transistor ElecSuper MMBTA06 with 80V Collector Base Voltage and 500mA Continuous Collector Current factory

NPN Transistor ElecSuper MMBTA06 with 80V Collector Base Voltage and 500mA Continuous Collector Current

Key Attributes
Model Number: MMBTA06
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-
Mfr. Part #:
MMBTA06
Package:
SOT-23
Product Description

Product Overview

The MMBTA06 is an NPN transistor from ElecSuper, designed for general-purpose applications. It features a Collector-Base Voltage (VCBO) of 80V and a Continuous Collector Current (IC) of 500mA, with a power dissipation of 300mW. This transistor is complementary to the MMBTA56 and is housed in a SOT-23 small outline plastic package, offering high stability and reliability. Its small size and robust performance make it suitable for various electronic circuits.

Product Attributes

  • Brand: ElecSuper
  • Model: MMBTA06
  • Type: NPN Transistor
  • Package: SOT-23 Small Outline Plastic Package
  • Material: Epoxy UL: 94V-0
  • Mounting Position: Any

Technical Specifications

Parameter Symbol Value Unit Condition
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 4 V
Collector Current-Continuous IC 500 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature TSTG -55~150
Thermal Resistance Junction to Ambient RJA 416 /W
Collector-base breakdown voltage V(BR)CBO 80 V IC=100uA, IE=0
Collector-emitter breakdown voltage V(BR)CEO 80 V IC=1mA, IB=0
Emitter-base breakdown voltage V(BR)EBO 4 V IE=100uA, IC=0
Collector cut-off current ICBO 100 nA VCB=80V, IE=0
Collector cut-off current ICEO 1 uA VCE=60V, IB=0
Emitter cut-off current IEBO 100 nA VEB=3V, IC=0
DC current gain hFE1* 100-400 VCE=1V, IC=10mA
DC current gain hFE2* 100 VCE=1V, IC=100mA
Collector-emitter saturation voltage VCE(sat)* 0.25 V IC=100mA, IB=10mA
Base-emitter saturation voltage VBE(sat)* 1.20 V IC=100mA, IB=10mA
Transition frequency fT 100 MHz VCE=2V, IC=10mA, f=100MHz

*Pulse test: pulse width300us, duty cycle2.0%

Dimensions and Patterns (SOT-23)

Symbol Dimensions (mm) Min. Dimensions (mm) Max. Symbol Dimensions (mm) Min. Dimensions (mm) Max.
A 0.900 1.150 E1 2.250 2.550
A1 0.900 1.050 e 0.950 (TYP)
b 0.300 0.500 e1 1.800 2.000
c 0.080 0.150 L 0.550 (REF)
D 2.800 3.00 L1 0.300 0.500
E 1.200 1.400 0 8
0.80 2.02 1.90 0.60

Note: 1. Controlling dimension: in millimeters. 2. General tolerance: 0.05mm. 3. The pad layout is for reference only. 4. Unit: mm.


2410121717_ElecSuper-MMBTA06_C5249689.pdf

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