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quality load switching Doeshare DT6T10T-BH TRIAC silicon bidirectional thyristor with green molding compound factory
quality load switching Doeshare DT6T10T-BH TRIAC silicon bidirectional thyristor with green molding compound factory

load switching Doeshare DT6T10T-BH TRIAC silicon bidirectional thyristor with green molding compound

Key Attributes
Model Number: DT6T10T-BH
Product Custom Attributes
Current - Gate Trigger(Igt):
10mA
Current - On State(It(RMS)):
6A
Peak Off - State Voltage(Vdrm):
800V
Mfr. Part #:
DT6T10T-BH
Package:
TO-220
Product Description

DT6T10T-BH TRIAC SILICON BIDIRECTIONAL THYRISTOR

Product Overview
The DT6T10T-BH is a high commutation performance TRIAC designed for third quadrant applications, housed in a TO-220C package. This device offers reliable control for AC switching and various load types, including motors, fans, pumps, solenoids, and LED dimming. It is engineered for use without a snubber circuit, providing a simplified design. The TRIAC supports phase angle trigger or on/off trigger control, making it versatile for general-purpose AC switching applications and inrush current limiting circuits. Manufactured with a passivated die for enhanced reliability and uniformity, it operates effectively up to 150C and is compliant with RoHS II 2015/863/EU standards.

Product Attributes

  • Brand: DOESHARE
  • Model: DT6T10T-BH
  • Package Type: TO-220C
  • Material: "Green" molding compound
  • Certifications: UL flammability classification 94V-0, RoHS II 2015/863/EU compliant, IPC/JEDEC J-STD-020 moisture sensitivity
  • Triggering Capability: Three-quadrant triggering
  • Snubber Circuit: Not required

Technical Specifications

Parameter Symbol Value Unit Notes
Peak repetitive off-state voltage VDRM, VRRM 800 V Tj = -40 to 150C, Full sine wave, 50 to 60 Hz; Gate open
On-stage RMS current IT(RMS) 6 A Full sine wave, TC = 100C
Peak non-repetitive surge current ITSM 55 A One full cycle 60 HZ, Tj = 25C
Circuit fusing consideration I2T 12 AS t = 8.3ms
Operating junction temperature range Tj -40 to +150 C
Storage temperature range TSTG -40 to +150 C
Thermal resistance from junction to case (without heatsink) Rth(j-C) Max 7.3 C/W (1)
Junction to Lead (without heatsink) Rth(j-L) Typ 6.5 C/W (1)
Maximum lead temperature for soldering TL Max 260 C (1/8 form case for 10 seconds)
Threshold Voltage (Tj = 150C) Vto -- 0.96 V
Dynamic resistors (Tj = 150C) Rd -- 90 m
Peak repetitive forward or reverse blocking current (Tj= 25C) IDRM, IRRM -- 5 uA VAK = VDRM and VRRM, gate open
Peak repetitive forward or reverse blocking current (Tj= 125C) IDRM, IRRM -- 700 uA VAK = VDRM and VRRM, gate open
Peak repetitive forward or reverse blocking current (Tj= 150C) IDRM, IRRM -- 1.9 mA VAK = VDRM and VRRM, gate open
Peak forward on-state voltage (ITM = 6 A @ Tj = 25C) VTM -- 1.5 V
Gate trigger voltage (VAK= VDRM, RL=100, Tj=150C) VGD 0.3 -- V
Gate trigger current (VAK = 12V, RL=100) IGT1, IGT2, IGT3 -- 10 mA
Gate trigger voltage (VAK = 12V, RL=100) VGT1, VGT2, VGT3 -- 1 V
Holding current (VAK = 12V, RL=100) IH1, IH3 -- 10 mA
Latching current (VAK = 12V, RL=100) IL1, IL2, IL3 -- 30 mA

Dimensions (TO-220C Package)

DIM Min Max DIM Min Max DIM Min Max
A 9.7 10.4 a 1.22 1.32 a2 1.18 1.45
B 6.13 6.82 a1 0.7 0.92
C2 4.3 4.71 b1 9.6 10.6
C 1.2 1.42 E 2.34 2.74
R 3.55 3.78 B1 9.0 9.4
b 12.6 13.6 C1 2.2 2.75
L 15.7 16.14 c 0.38 0.65

2411271931_Doeshare-DT6T10T-BH_C919183.pdf
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