NPN Silicon General Purpose Transistor EIC MMBT4140 Suitable for Stable Electronic Circuit Operation
Key Attributes
Model Number:
MMBT4140
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
450mW
Transition Frequency(fT):
150MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
30V
Mfr. Part #:
MMBT4140
Package:
SOT-23
Product Description
MMBT4140 NPN Silicon General Purpose Transistor
The MMBT4140 is an NPN silicon general-purpose transistor designed for a wide range of applications. It offers reliable performance in various electronic circuits.
Product Attributes
- Brand: EIC Semiconductor
- Package: SOT-23 Plastic
- Certifications: IATF 0113686, SGS TH07/1033, TH09/2479, TH97/2478
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Collector Base Voltage | VCBO | 40 | V | |
| Collector Emitter Voltage | VCEO | 30 | V | |
| Emitter Base Voltage | VEBO | 5 | V | |
| Collector Current (DC) | IC | 1 | A | |
| Peak Collector Current | ICM | 2 | A | |
| Peak Base Current | IBM | 1 | A | |
| Total Power Dissipation | Ptot | 200 | mW | 1) Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. |
| Total Power Dissipation | Ptot | 450 | mW | 2) Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1cm2 |
| Junction Temperature | Tj | 150 | OC | |
| Storage Temperature Range | Tstg | -65 to +150 | OC | |
| DC Current Gain (at VCE = 5 V, IC = 1 mA) | hFE | 300 | - | 900 |
| DC Current Gain (at VCE = 5 V, IC = 500 mA) | hFE | 300 | - | 900 |
| DC Current Gain (at VCE = 5 V, IC = 1 A) | hFE | 200 | - | |
| Collector Base Cutoff Current (at VCB = 40 V) | ICBO | - | 100 | nA |
| Collector Emitter Cutoff Current (at VCE = 30 V) | ICEO | - | 100 | nA |
| Emitter Base Cutoff Current (at VEB = 5 V) | IEBO | - | 100 | nA |
| Collector Emitter Saturation Voltage (at IC = 100 mA, IB = 1 mA) | VCE(sat) | - | 200 | mV |
| Collector Emitter Saturation Voltage (at IC = 500 mA, IB = 50 mA) | VCE(sat) | - | 250 | mV |
| Collector Emitter Saturation Voltage (at IC = 1 A, IB = 100 mA) | VCE(sat) | - | 500 | mV |
| Base Emitter Saturation Voltage (at IC = 1 A, IB = 100 mA) | VBE(sat) | - | 1.2 | V |
| Base Emitter Turn-on Voltage (at VCE = 5 V, IC = 1 A) | VBE(on) | - | 1.1 | V |
| Transition Frequency (at VCE = 10 V, IC = 50 mA, f = 100 MHz) | fT | 150 | MHz | |
| Collector Capacitance (at VCB = 10 V, f = 1 MHz) | Cob | - | 10 | pF |
2410121502_EIC-MMBT4140_C3014320.pdf
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