Schottky Barrier Rectifier Diode DOWO 1N5819 1A 40V Metal Silicon Junction RoHS Compliant
Key Attributes
Model Number:
1N5819
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
25A
Voltage - DC Reverse (Vr) (Max):
40V
Operating Junction Temperature Range:
-65℃~+125℃
Voltage - Forward(Vf@If):
600mV@1.0A
Current - Rectified:
1A
Mfr. Part #:
1N5819
Package:
DO-41
Product Description
Product Overview
The 1N5817-1N5819 series are 1A, 20V-40V Schottky Barrier Rectifier Diodes designed for low voltage, high frequency inverters, free-wheeling, and polarity protection applications. These diodes feature a metal silicon junction with majority carrier conduction, a guardring for overvoltage protection, low power loss, high efficiency, high current capability, and low forward voltage drop. They are compliant with RoHS standards.
Product Attributes
- Brand: DOWOSEMI
- Origin: China (implied by URL)
- Material: Metal silicon junction
- Certification: RoHS standard, Underwriters Laboratory Flammability Classification 94V-0
Technical Specifications
| Model | VRRM (V) | VRMS (V) | VDC (V) | I(AV) (A) | IFSM (A) | VF (V) | IR (mA) | RJA (C/W) | CJ (pF) | TJ,TSTG (C) |
| 1N5817 | 20 | 15 | 20 | 1.0 | 25.0 | 0.550 (at 1.0A) | 0.5 (at 25C), 10.0 (at 100C) | 110.0 | 50.0 | -65 to +125 |
| 1N5818 | 30 | 21 | 30 | 1.0 | 25.0 | 0.550 (at 1.0A) | 0.5 (at 25C), 10.0 (at 100C) | 110.0 | 50.0 | -65 to +125 |
| 1N5819 | 40 | 28 | 40 | 1.0 | 25.0 | 0.550 (at 1.0A) | 0.5 (at 25C), 10.0 (at 100C) | 110.0 | 50.0 | -65 to +125 |
2410121805_DOWO-1N5819_C27636129.pdf
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