TrenchFET Power MOSFET DOWO BSS123 in Compact SOT23 Package for Portable Electronics Load Switching
Key Attributes
Model Number:
BSS123
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
170mA
Operating Temperature -:
-
RDS(on):
6Ω@10V,0.17A
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
6pF
Input Capacitance(Ciss):
60pF
Output Capacitance(Coss):
15pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
2nC@10V
Mfr. Part #:
BSS123
Package:
SOT-23
Product Description
Product Overview
The SOT-23 Plastic-Encapsulate MOSFET is a TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It offers a compact SOT-23 package with excellent thermal characteristics.
Product Attributes
- Package: SOT-23
- Epoxy UL Flammability Rating: 94V-0
- Mounting Position: Any
Technical Specifications
| Parameters | Symbol | Test Condition | Value | Unit |
| Static Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250uA | 100 | V |
| RGS20K | 100 | V | ||
| VGS=0V | 1.00 | |||
| VDS=20V, VGS=0V | 0.01 | uA | ||
| Gate-Threshold voltage | V GS (th) | VDS=VGS, ID=250uA | 1.0 - 2.8 | V |
| Typ | 1.6 | V | ||
| Gate-body Leakage | IGSS | VDS=0V, VGS=20V | 50 | nA |
| Zero Gate Voltage Drain current | IDSS | VDS=100V, VGS=0V | 1.00 | |
| VDS=20V, VGS=0V | 0.01 | uA | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=0.17A | 6 | |
| VGS=4.5V, IC=0.17A | 10 | |||
| Forward trans conductance | gfs | VDS=10V, ID=0.17A | 80 | mS |
| Diode forward voltage | VSD | IS=0.34A, VGS=0V | 1.3 | V |
| Dynamic | Ciss | VDS=25V, VGS=0V,f=1MHz | 29 - 60 | pF |
| Coss | 10 - 15 | |||
| Crss | 2 - 6 | |||
| Switching | td(on) | VDD=30V, RGEN=50, VGS=10V, ID0.28A, | 8 | ns |
| tr | 8 | |||
| td(off) | 13 | |||
| tf | 16 | |||
| Charge | Qg | VDS=10V, VGS=10V, ID=0.22A, | 1.4 - 2 | nC |
| Qgs | 0.15 - 0.25 | |||
| Qgd | 0.2 - 0.4 | |||
| Continuous Drain Current | ID | (note1) | 0.17 | A |
| Pulsed Drain Current | IDM | (tp=10us) | 0.68 | A |
| Power Dissipation | PD | 350 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -50-+150 | ||
| Thermal Resistance From Junction to Ambient | RJA | (note1) | 357 | /W |
2410121612_DOWO-BSS123_C18198442.pdf
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