NPN Silicon Epitaxial Planar Transistor EIC MMBT6517BEC for Switching and AF Amplifier Applications
Key Attributes
Model Number:
MMBT6517BEC
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
200MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
350V
Mfr. Part #:
MMBT6517BEC
Package:
TO-236
Product Description
Product Overview
MMBT6517 is an NPN Silicon Epitaxial Planar Transistor designed for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations.
Product Attributes
- Brand: SGS (implied from datasheet markings)
- Certifications: IATF 0060636
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector Base Voltage | VCBO | 350 | V | |
| Collector Emitter Voltage | VCEO | 350 | V | |
| Emitter Base Voltage | VEBO | 6 | V | |
| Collector Current | IC | 500 | mA | |
| Power Dissipation | Ptot | 200 | mW | Ta = 25 OC |
| Junction Temperature | Tj | 150 | OC | |
| Storage Temperature Range | Tstg | -55 to +150 | OC | |
| DC Current Gain | hFE | 20 | - | VCE = 10 V, IC = 1 mA |
| DC Current Gain | hFE | 30 | - | VCE = 10 V, IC = 10 mA |
| DC Current Gain | hFE | 30 | - | VCE = 10 V, IC = 30 mA |
| DC Current Gain | hFE | 20 | - | VCE = 10 V, IC = 50 mA |
| DC Current Gain | hFE | 15 | - | VCE = 10 V, IC = 100 mA |
| Collector Base Cutoff Current | ICBO | -50 | nA | VCB = 250 V |
| Emitter Base Cutoff Current | IEBO | -50 | nA | VEB = 5 V |
| Collector Base Breakdown Voltage | V(BR)CBO | 350 | V | IC = 100 A |
| Collector Emitter Breakdown Voltage | V(BR)CEO | 350 | V | IC = 1 mA |
| Emitter Base Breakdown Voltage | V(BR)EBO | 6 | V | IE = 10 A |
| Collector Emitter Saturation Voltage | VCE(sat) | 0.3 | V | IC = 10 mA, IB = 1 mA |
| Collector Emitter Saturation Voltage | VCE(sat) | 0.35 | V | IC = 20 mA, IB = 2 mA |
| Collector Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC = 30 mA, IB = 3 mA |
| Collector Emitter Saturation Voltage | VCE(sat) | 1 | V | IC = 50 mA, IB = 5 mA |
| Base Emitter Saturation Voltage | VBE(sat) | 0.75 | V | IC = 10 mA, IB = 1 mA |
| Base Emitter Saturation Voltage | VBE(sat) | 0.85 | V | IC = 20 mA, IB = 2 mA |
| Base Emitter Saturation Voltage | VBE(sat) | 0.9 | V | IC = 30 mA, IB = 3 mA |
| Base Emitter On Voltage | VBE(on) | 2 | V | VCE = 10 V, IC = 100 mA |
| Gain Bandwidth Product | fT | 40 to 200 | MHz | VCE = 20 V, IC = 10 mA, f = 20 MHz |
| Collector Output Capacitance | Cob | 6 | pF | VCB = 20 V, f = 1 MHz |
2505151658_EIC-MMBT6517BEC_C3015264.pdf
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