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quality NPN transistor ElecSuper BC817-40 in SOT-23 package with 45V collector emitter voltage and 300mW power rating factory
quality NPN transistor ElecSuper BC817-40 in SOT-23 package with 45V collector emitter voltage and 300mW power rating factory

NPN transistor ElecSuper BC817-40 in SOT-23 package with 45V collector emitter voltage and 300mW power rating

Key Attributes
Model Number: BC817-40
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC817-40
Package:
SOT-23
Product Description

Product Overview

The ElecSuper BC817 is an NPN transistor in a SOT-23 plastic-encapsulated package. Designed for general-purpose applications, it offers a VCBO of 50V and an IC of 500mA. Key features include its complementary nature to the BC807, high stability, and high reliability. With a power dissipation of 300mW, it is suitable for various electronic circuits requiring robust performance.

Product Attributes

  • Brand: ElecSuper
  • Package Type: SOT-23 Small Outline Plastic Package
  • Encapsulation Material: Epoxy UL: 94V-0
  • Mounting Position: Any
  • Complementary to: BC807

Technical Specifications

Parameters Symbol Test Condition Min Typ Max Unit
Absolute Maximum Rating & Thermal Characteristics
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5 V
Collector Current-Continuous IC 500 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature TSTG -55 150
Thermal Resistance Junction to Ambient RJA 417 /W
Electrical Characteristics (At TA = 25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=10uA, IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO* IC=10mA, IB=0 45 V
Emitter-base breakdown voltage V(BR)EBO IE=1uA, IC=0 5 V
Collector cut-off current ICBO VCB=45V, IE=0 100 nA
Emitter cut-off current IEBO VEB=4V, IC=0 100 nA
DC current gain hFE1* VCE=1V, IC=100mA 100 600
DC current gain hFE2* VCE=1V, IC=500mA 40
Collector-emitter saturation voltage VCE(sat)* IC=500mA, IB=50mA 0.70 V
Base-emitter saturation voltage VBE(sat)* IC=500mA, IB=50mA 1.20 V
Base-emitter voltage VBE VCE=1V, IC=500mA 1.20 V
Collector output capacitance COB VCB=10V, f=1MHz 10 pF
Transition frequency fT VCE=5V, IC=10mA, f=100MHz 100 MHz
Classification of hFE1
Rank Range
BC817-16 100-250
BC817-25 160-400
BC817-40 250-600
Marking 6A 6B 6C
Dimension and Patterns (SOT-23)
Symbol Dimensions (mm) Min. Max.
A 0.900 1.150
A1 0.900 1.050
b 0.300 0.500
c 0.080 0.150
D 2.800 3.00
E 1.200 1.400
E1 2.250 2.550
e (TYP) 0.950
e1 1.800 2.000
L (REF) 0.550
L1 0.300 0.500
0 8
Additional Dimensions 0.80 2.02 1.90 0.60

Note: 1. Controlling dimension: in millimeters. 2. General tolerance: 0.05mm. 3. The pad layout is for reference only. 4. Unit: mm.


2410121717_ElecSuper-BC817-40_C5249694.pdf

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