P Channel enhancement mode MOSFET ElecSuper AO6401A ES optimized for fast switching and power management
Key Attributes
Model Number:
AO6401A(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.7A
RDS(on):
46mΩ@10V
Gate Threshold Voltage (Vgs(th)):
800mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Output Capacitance(Coss):
85pF
Input Capacitance(Ciss):
650pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
AO6401A(ES)
Package:
SOT-23-6L
Product Description
Product Overview
The AO6401A(ES) is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering features like fast switching, high density cell design, and avalanche rating.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS SOT-23-6L
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | -4.7 | A | ||
| Continuous Drain Current | ID | TA=75°C | -3.7 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 2 | W | ||
| Maximum Power Dissipation | PD | TA=75°C | 1.2 | W | ||
| Pulsed Drain Current | IDM | -18.8 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | (t ≤ 10s) | 47.5 | 62.5 | °C/W | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.5 | -0.8 | -1.1 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-4.5A | 46 | 58 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-3.5A | 52 | 65 | mΩ | |
| Forward Transconductance | gFS | VDS=-5.0V, ID=-4.5A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, VDS =-15V f=1MHz | 650 | pF | ||
| Output Capacitance | COSS | 85 | pF | |||
| Reverse Transfer Capacitance | CRSS | 55 | pF | |||
| Total Gate Charge | QG | VGS=-10V, VDS=-10V ID =-4.5A | 15 | nC | ||
| Gate-to-Source Charge | QGS | 7.5 | nC | |||
| Gate-to-Drain Charge | QGD | 2.63 | nC | |||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-10V ID=-4.5A, RG=3Ω | 6.8 | ns | ||
| Rise Time | tr | 3.1 | ns | |||
| Turn-Off Delay Time | td(OFF) | 51 | ns | |||
| Fall Time | tf | 12 | ns | |||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.78 | -1.5 | V | |
2504101957_ElecSuper-AO6401A-ES_C42412248.pdf
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