Low RDS ON N Channel MOSFET ElecSuper STD30NF06LT4 ES with High Reliability and Rugged Construction
Key Attributes
Model Number:
STD30NF06LT4(ES)
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF
Output Capacitance(Coss):
62pF
Input Capacitance(Ciss):
860pF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
20.3nC@10V
Mfr. Part #:
STD30NF06LT4(ES)
Package:
TO-252
Product Description
Product Overview
The STD30NF06LT4(ES) is an N-Channel enhancement MOS Field Effect Transistor from ElecSuper. It utilizes advanced technology to achieve excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switches, and charging circuits. This standard product is Pb-free and features a high-density cell design for low RDS(on), reliability, ruggedness, and avalanche rating.
Product Attributes
- Brand: ElecSuper
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
- Product Series: SuperMOS
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | 20 | A | ||
| Continuous Drain Current | ID | TC=75C | 16 | A | ||
| Maximum Power Dissipation | PD | 25 | W | |||
| Pulsed Drain Current | IDM | 80 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 16 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 16 | mJ | ||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | to | 150 | C | |
| Junction-to-Case Thermal Resistance | RJC | Steady State | 5 | /W | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.6 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 26 | 33 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=10A | 33 | 45 | m | |
| Forward Transconductance | gFS | VDS=5.0V, ID=20A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 860 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 62 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 51 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=30V, ID=10A | 20.3 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=30V, ID=10A | 3.8 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=30V, ID=10A | 5.5 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=30V, ID=5A, RG=1.8 | 6 | ns | ||
| Rise Time | tr | VGS=10V, VDS=30V, ID=5A, RG=1.8 | 6 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=30V, ID=5A, RG=1.8 | 19 | ns | ||
| Fall Time | tf | VGS=10V, VDS=30V, ID=5A, RG=1.8 | 3 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=10A | 0.7 | 1.5 | V |
2504101957_ElecSuper-STD30NF06LT4-ES_C42434117.pdf
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