Durable P Channel MOSFET ElecSuper AO4801 ES Suitable for DC DC Conversion and Charging Circuits
Key Attributes
Model Number:
AO4801-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.7A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
58mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
2 P-Channel
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
954pF
Pd - Power Dissipation:
3.13W
Gate Charge(Qg):
9.4nC@4.5V
Mfr. Part #:
AO4801-ES
Package:
SOP8
Product Description
Product Overview
The AO4801-ES is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering fast switching, high-density cell design, and a reliable, rugged construction.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Product Line: SuperMOS
- Package: SOP8
- Flammability Rating: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | -5.7 | A | ||
| Continuous Drain Current | ID | TA=100°C | -3.6 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 3.13 | W | ||
| Maximum Power Dissipation | PD | TA=100°C | 1.25 | W | ||
| Pulsed Drain Current | IDM | -22.8 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 8.5 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 10.8 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.5 | -0.8 | -1.1 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-4A | 40 | 58 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-3A | 49 | 65 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-15V f=1MHz | 954 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-15V f=1MHz | 115 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-15V f=1MHz | 77 | pF | ||
| Gate Resistance | Rg | f=1MHZ | 6 | Ω | ||
| Total Gate Charge | QG(TOT) | VGS=-4.5V, VDS=-15V ID =-4A | 9.4 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-4.5V, VDS=-15V ID =-4A | 2 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-4.5V, VDS=-15V ID =-4A | 3 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-15V RL=3.6Ω, RG=6Ω | 6.3 | ns | ||
| Rise Time | tr | VGS=-4.5V, VDS=-15V RL=3.6Ω, RG=6Ω | 3.2 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-4.5V, VDS=-15V RL=3.6Ω, RG=6Ω | 38.2 | ns | ||
| Fall Time | tf | VGS=-4.5V, VDS=-15V RL=3.6Ω, RG=6Ω | 12 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.8 | -1.5 | V | |
2504101957_ElecSuper-AO4801-ES_C19725085.pdf
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