100V N Channel MOSFET Fast Switching FETek FKP0016A Ideal for SMPS and DC DC Conversion Applications
Key Attributes
Model Number:
FKP0016A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
37A
RDS(on):
47mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
82pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
3.848nF@15V
Pd - Power Dissipation:
87W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
FKP0016A
Package:
TO-220
Product Description
Product Overview
The FKP0016A is a N-Channel 100V Fast Switching MOSFET from FETek Technology Corp. It features advanced Trench MOSFET technology, offering reliability and ruggedness. This MOSFET is designed for hard switching and high-speed circuits, making it suitable for applications such as synchronous rectification in SMPS and DC/DC conversion in telecoms and industrial sectors. Green device availability is also noted.
Product Attributes
- Brand: FETek Technology Corp.
- Model: FKP0016A
- Channel Type: N-Channel
- Voltage Rating: 100V
- Switching Speed: Fast
- Technology: Advanced Trench MOSFET
- Certifications: Green Device Available (implied)
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=20A | --- | --- | 47 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25 | --- | --- | 10 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Qg | Total Gate Charge | VDS=80V , VGS=10V , ID=20A | --- | 48 | --- | nC |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 3848 | --- | pF |
| Coss | Output Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 137 | --- | pF |
| Crss | Reverse Transfer Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 82 | --- | pF |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 37 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=20A , dI/dt=100A/s , TJ=25 | --- | 30 | --- | nS |
| Qrr | Reverse Recovery Charge | IF=20A , dI/dt=100A/s , TJ=25 | --- | 37 | --- | nC |
| RJC | Thermal Resistance Junction-Case | 1 | --- | 1.0 | --- | /W |
| RJA | Thermal Resistance Junction-ambient | 1 | --- | 62 | --- | /W |
| ID | Continuous Drain Current | TC=25 | --- | --- | 37 | A |
| ID | Continuous Drain Current | TC=100 | --- | --- | 23 | A |
| ID | Continuous Drain Current | TA=25 | --- | --- | 4.2 | A |
| ID | Continuous Drain Current | TA=70 | --- | --- | 3.3 | A |
| IDM | Pulsed Drain Current | 2 | --- | --- | 110 | A |
| EAS | Single Pulse Avalanche Energy | 3 | --- | 168.7 | --- | mJ |
| IAS | Avalanche Current | 3 | --- | 15 | --- | A |
| PD | Total Power Dissipation | TC=25 | --- | --- | 87 | W |
| PD | Total Power Dissipation | TA=25 | --- | --- | 2 | W |
| TSTG | Storage Temperature Range | -55 | --- | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | --- | 150 |
2411220326_FETek-FKP0016A_C7529478.pdf
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