Power management P channel MOSFET FM 3415E featuring ultra low on resistance and 2000V ESD protection
Key Attributes
Model Number:
3415E
Product Custom Attributes
Drain To Source Voltage:
9V
Current - Continuous Drain(Id):
3.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
-
Gate Charge(Qg):
-
Mfr. Part #:
3415E
Package:
SOT-23-3
Product Description
Product Overview
The 3415E is a 9V P-channel MOSFET field-effect transistor from SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. It features ultra-low on-resistance (RDS(ON) <60m @ VGS=-4.5V) and is designed for reliable and durable performance with ESD protection up to 2000V (HBM). This MOSFET is ideal for power management in notebook computers, portable devices, and battery-powered systems.
Product Attributes
- Brand: FINE MADE (Superchip)
- Origin: China
- Model Number: 3415E
- Document Number: S&CIC1597
- Version: 1.0
Technical Specifications
| Parameter | Test Condition | Min | Typical | Max | Unit |
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V, IDS=-250A | -8.4 | -9 | V | |
| IDSS (Drain Current) | VDS=-6V, VGS=0V, TA=85 | -1 | -10 | A | |
| VGS(th) (Gate Threshold Voltage) | VDS=VGS, IDS=-250A | -0.35 | -0.5 | -1.4 | V |
| IGSS (Gate Leakage Current) | VGS=5V, VDS=0V | 100 | nA | ||
| RDS(ON) (On-Resistance) | VGS=-4.5V, IDS=-3.0A | 55 | 60 | m | |
| VGS=-2.5V, IDS=-2.0A | 70 | 75 | m | ||
| VGS=-1.8V, IDS=-1.0A | 110 | 120 | m | ||
| VSD (Diode Forward Voltage) | ISD=-3.5A, VGS=0V | -1.3 | V | ||
| RG (Gate Input Resistance) | VGS=0.VDS=0. Frequency=1MHZ | -- | 6 |
Absolute Maximum Ratings
| Symbol | Parameter | Value | Unit |
| VDSS | Drain-Source Voltage | -9 | V |
| VGSS | Gate-Source Voltage | 6 | |
| ID | Drain Current | -3.5 | A |
| IDM | Drain Pulse Current | -7 | |
| TJ | Maximum Junction Temperature | 150 | |
| TSTG | Storage Temperature | -55 to 150 | |
| RJAb | Junction-to-Ambient Thermal Resistance | 150 | /W |
Package Information
| Symbol | mm | Inch | ||
| Min | Max | Min | Max | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 1.200 | 1.400 | 0.047 | 0.055 |
| E1 | 2.250 | 2.550 | 0.089 | 0.100 |
| e | 0.950 TYP. | 0.037 TYP. | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.550 REF. | 0.022 REF. | ||
| L1 | 0.300 | 0.500 | 0.012 | 0.020 |
| 0 | 8 | 0 | 8 | |
2411220530_FM-3415E_C2834504.pdf
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