V Series Industrial IGBT Module Fuji Electric 2MBI300HJ-120-50 for Soft Switching Applications
Key Attributes
Model Number:
2MBI300HJ-120-50
Product Custom Attributes
Pd - Power Dissipation:
1.95kW
Td(off):
300ns
Td(on):
250ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
36nF
IGBT Type:
IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.7V@300mA
Reverse Recovery Time(trr):
130ns
Mfr. Part #:
2MBI300HJ-120-50
Package:
Screw Terminals
Product Description
Product Overview
The 2MBI300HJ-120-50 is a V series IGBT Power Module designed for high-speed switching applications. It features voltage drive capability and a low inductance module structure, making it ideal for industrial machines such as welding machines and soft-switching applications.
Product Attributes
- Brand: Fuji Electric
- Series: V series
- Package: 2-in-1
- Weight: 370g (typ.)
Technical Specifications
| Item | Symbols | Conditions | Units | min. | typ. | max. |
|---|---|---|---|---|---|---|
| Collector-Emitter voltage | VCES | V | 1200 | |||
| Gate-Emitter voltage | VGES | V | 20 | |||
| Collector power dissipation | PC | 1 device | W | 1950 | ||
| Collector current (Continuous) | IC | Tc=25 | A | 300 | ||
| Collector current (pulse 1ms) | IC pulse | A | 600 | |||
| Junction temperature | Tj | C | 150 | |||
| Case temperature | Tc | C | 125 | |||
| Storage temperature | Tstg | C | -40 | 125 | ||
| Isolation voltage | Viso | AC: 1min. | VAC | 2500 | ||
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V | nA | 4.0 | ||
| Zero gate voltage Collector current | ICES | VGE=0V, VCE=1200V | mA | 4.0 | ||
| Gate-Emitter threshold voltage | VGE(th) | VCE=20V, Ic=300mA | V | 5.7 | 6.2 | 6.7 |
| Collector-Emitter saturation voltage (terminal) | VCE(sat) | VGE=15V, Ic=300A, Tj=25 | V | 3.40 | ||
| Collector-Emitter saturation voltage (terminal) | VCE(sat) | VGE=15V, Ic=300A, Tj=125 | V | 4.20 | ||
| Collector-Emitter saturation voltage (chip) | VCE(sat) | VGE=15V, Ic=300A, Tj=25 | V | 3.20 | 3.50 | |
| Collector-Emitter saturation voltage (chip) | VCE(sat) | VGE=15V, Ic=300A, Tj=125 | V | 4.00 | ||
| Internal gate resistance | RG(int) | 0.5 | ||||
| Input capacitance | Cies | VCE=10V, VGE=0V, =1MHz | nF | 300 | ||
| Turn-on time | ton | Vcc=600V, VGE=15V, IC=300A, RG=3.3, Tj=25 | nsec | 250 | ||
| Turn-off time | toff | Vcc=600V, VGE=15V, IC=300A, RG=3.3, Tj=25 | nsec | 130 | ||
| Reverse recovery time | trr | IF=400A, Tj=125 | nsec | 180 | ||
| Contact thermal resistance with Thermal Compound | Rth(c-f) | C/W | 0.0125 | |||
| Thermal resistance (1 device) IGBT | Rth(j-c) | C/W | 0.064 | |||
| Thermal resistance (1 device) FWD | Rth(j-c) | C/W | 0.110 |
2410122012_Fuji-Electric-2MBI300HJ-120-50_C41348473.pdf
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