Power Switching N Channel MOSFET ElecSuper ESE3050K Featuring Low Leakage Current and High Reliability
Key Attributes
Model Number:
ESE3050K
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
RDS(on):
13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
120pF
Input Capacitance(Ciss):
1.25nF
Output Capacitance(Coss):
140pF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
ESE3050K
Package:
TO-252
Product Description
Product Overview
The ESE3050K is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering high density cell design, reliability, and low leakage current. This product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS
- Model: ESE3050K
- Package: TO-252
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: 100% UIS TESTED
Technical Specifications
| Parameter | Symbol | Limit | Unit | Typical | Test Conditions |
| Absolute Maximum Rating & Thermal Characteristics | |||||
| Drain-Source Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | |
| Gate-Source Voltage | VGS | ±20 | V | ||
| Continuous Drain Current | ID | 50 | A | TC=25°C | |
| 30 | A | TC=100°C | |||
| Maximum Power Dissipation | PD | 39 | W | ||
| Pulsed Drain Current | IDM | 200 | A | ||
| Avalanche Energy, Single Pulsed | EAS | 56 | mJ | TJ=25°C,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω,IAS=15A | |
| Operating Junction Temperature | TJ | 150 | °C | ||
| Lead Temperature | TL | 260 | °C | ||
| Storage Temperature Range | Tstg | -55 to 150 | °C | ||
| Junction-to-Case Thermal Resistance | RθJC | °C/W | 3.2 | Single Operation | |
| Electrical Characteristics | |||||
| Gate Threshold Voltage | VGS(TH) | V | 1.0 - 1.6 - 2.5 | VGS=VDS, ID=250uA | |
| Drain-to-source On-resistance | RDS(on) | mΩ | 6.0 (Typ.) | VGS=10V, ID=20A | |
| 9.8 (Typ.) | VGS=4.5V, ID=10A | ||||
| Input Capacitance | CISS | pF | 1250 | VGS=0V, f=1MHz, VDS=15V | |
| Output Capacitance | COSS | pF | 140 | ||
| Reverse Transfer Capacitance | CRSS | pF | 120 | ||
| Total Gate Charge | QG(TOT) | nC | 23 | VGS=10V, VDD=15V, ID=20A | |
| Gate-to-Source Charge | QGS | nC | 4.5 | ||
| Gate-to-Drain Charge | QGD | nC | 5.5 | ||
| Turn-On Delay Time | td(ON) | ns | 7 | VGS=10V, VDS=15V, ID=15A, RG=3Ω | |
| Rise Time | tr | ns | 15 | ||
| Turn-Off Delay Time | td(OFF) | ns | 25 | ||
| Fall Time | tf | ns | 6 | ||
| Forward Voltage (Body Diode) | VSD | V | 1.2 | VGS=0V, IS=15A | |
2504101957_ElecSuper-ESE3050K_C42434105.pdf
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