Synchronous Buck Converter N Channel MOSFET Featuring FETek FKBA4006 with Low RDS ON and Gate Charge
Key Attributes
Model Number:
FKBA4006
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
RDS(on):
7.5mΩ@10V,12A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
138pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.332nF@15V
Pd - Power Dissipation:
46W
Gate Charge(Qg):
18.8nC@4.5V
Mfr. Part #:
FKBA4006
Package:
PRPAK5X6
Product Description
Product Overview
The FKBA4006 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed and approved for full function reliability.
Product Attributes
- Brand: FETek Technology Corp.
- Model: FKBA4006
- Type: N-Ch Fast Switching MOSFET
- Certifications: RoHS, Green Product
- EAS Guaranteed: 100%
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 60 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 45 | A | |||
| IDM | Pulsed Drain Current | 120 | A | |||
| EAS | Single Pulse Avalanche Energy | 76 | mJ | |||
| IAS | Avalanche Current | 39 | A | |||
| PD@TC=25 | Total Power Dissipation | 46 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-ambient (Steady State) | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case | --- | 2.7 | /W | ||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=12A | --- | 7.5 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=10A | --- | 10 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=12A | 39 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.6 | --- | ||
| Qg | Total Gate Charge (4.5V) | VDS=20V , VGS=4.5V , ID=12A | 18.8 | --- | nC | |
| Qgs | Gate-Source Charge | 4.7 | --- | |||
| Qgd | Gate-Drain Charge | 8.2 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=1A | 14.3 | --- | ns | |
| Tr | Rise Time | 2.6 | --- | |||
| Td(off) | Turn-Off Delay Time | 77 | --- | |||
| Tf | Fall Time | 4.8 | --- | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 2332 | --- | pF | |
| Coss | Output Capacitance | 193 | --- | |||
| Crss | Reverse Transfer Capacitance | 138 | --- | |||
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | 60 | A | |
| ISM | Pulsed Source Current | --- | 120 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | --- | 1 | V |
2411220046_FETek-FKBA4006_C5361879.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
