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quality ElecSuper IRFL4310TRPBF ES N Channel MOSFET Suitable for Charging Circuit and DC DC Power Conversion factory
quality ElecSuper IRFL4310TRPBF ES N Channel MOSFET Suitable for Charging Circuit and DC DC Power Conversion factory

ElecSuper IRFL4310TRPBF ES N Channel MOSFET Suitable for Charging Circuit and DC DC Power Conversion

Key Attributes
Model Number: IRFL4310TRPBF-ES
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@10V;130mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
650pF
Pd - Power Dissipation:
3.1W
Mfr. Part #:
IRFL4310TRPBF-ES
Package:
SOT-223
Product Description

Product Description

The IRFL4310TRPBF-ES is an N-Channel enhancement mode MOS Field Effect Transistor featuring advanced trench technology and design for excellent RDS(ON) with low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free.

Product Attributes

  • Brand: ElecSuper
  • Material: Halogen free
  • Certifications: UL 94V-0
  • Origin: Not specified
  • Color: Not specified

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Rating & Thermal Characteristics
Drain-Source Voltage BVDSS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID TA=25°C 4 A
Continuous Drain Current ID TA=100°C 2.3 A
Maximum Power Dissipation PD 3.1 W
Pulsed Drain Current IDM 16 A
Avalanche Current, Single Pulsed IAS a 9 A
Avalanche Energy, Single Pulsed EAS a 12 mJ
Operating Junction Temperature TJ 150 °C
Lead Temperature TL 260 °C
Storage Temperature Range Tstg -55 to 150 °C
Single Operation
Junction-to-Ambient Thermal Resistance RθJA 40 °C/W
Electrical Characteristics
Drain-to-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 100 V
Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 µA
Gate-to-source Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA
Gate Threshold Voltage VGS(TH) VGS=VDS, ID=250uA 1.0 1.7 2.5 V
Drain-to-source On-resistance RDS(on) VGS=10V, ID=4A 120 150 mΩ
Drain-to-source On-resistance RDS(on) VGS=4.5V, ID=3A 130 180 mΩ
Input Capacitance CISS VGS=0V, f=1MHz, VDS=25V 650 pF
Output Capacitance COSS VGS=0V, f=1MHz, VDS=25V 30 pF
Reverse Transfer Capacitance CRSS VGS=0V, f=1MHz, VDS=25V 25 pF
Forward Voltage VSD VGS=0V, IS=4A 1.5 V

2504101957_ElecSuper-IRFL4310TRPBF-ES_C22464636.pdf

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