18V P channel enhancement mode MOSFET FM 2301 with ultra low on resistance and power switching capability
Key Attributes
Model Number:
2301
Product Custom Attributes
Drain To Source Voltage:
18V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@4.5V,1A
Gate Threshold Voltage (Vgs(th)):
700mV
Type:
P-Channel
Number:
1 P-Channel
Pd - Power Dissipation:
1.25W
Mfr. Part #:
2301
Package:
SOT-23
Product Description
Product Overview
18V P-channel enhancement mode MOSFET with advanced processing technology, ultra-low on-resistance, and high-density cell design. Suitable for applications requiring efficient power switching.
Product Attributes
- Brand: SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD.
- Origin: China
- Document Number: S&CIC1241
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typical | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250uA | -12 | -18 | -- | V |
| On-Resistance | RDS(on) | VGS = -4.5V, ID = -1A | -- | 60 | 85 | m |
| RDS(on) | VGS = -2.5V, ID = -0.5A | -- | 82 | 115 | m | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250uA | -0.4 | -0.7 | -1.1 | V |
| Drain Current | ID | (TA=25) | -- | -- | -2.8 | A |
| Drain Pulse Current | IDM | -- | -- | -- | -6 | A |
| Maximum Power Dissipation | PD | TA=25 | -- | -- | 1.25 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -- | -55 | -- | 150 | |
| Thermal Resistance (PCB Mount) | RJA | -- | -- | -- | 140 | W/ |
| Diode Continuous Forward Current | IS | -- | -- | -- | 1.6 | A |
| Diode Forward Voltage | VSD | IS = -1.6A, VGS = 0V | -- | -0.75 | -- | V |
2410121243_FM-2301_C86773.pdf
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