Zener Diode SOT23 Package FOSAN BZX84C4V3 Voltage Regulation Device for Electronic Circuits
Key Attributes
Model Number:
BZX84C4V3
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+125℃
Impedance(Zzt):
85Ω
Diode Configuration:
Independent
Pd - Power Dissipation:
300mW
Zener Voltage(Range):
4V~4.6V
Zener Voltage(Nom):
4.3V
Mfr. Part #:
BZX84C4V3
Package:
SOT-23
Product Description
Product Overview
The BZX84C2V4-BZX84C75 series is a range of surface-mounted Zener diodes in a SOT-23 package. These diodes are designed for voltage regulation applications, offering a wide range of Zener voltages from 2.4V to 75V. They feature a maximum power dissipation of 300mW and a forward current of 250mA.
Product Attributes
- Brand: FOSAN
- Package: SOT-23
Technical Specifications
| Type | VZ (V) Nom | VZ (V) Min | VZ (V) Max | @Iz(mA) | IR (A) Max @VR(V) | ZZT (ohm) Max @Iz(mA) | ZZK (ohm) Max @Iz(mA) | Marking |
| BZX84C2V4 | 2.4 | 2.2 | 2.6 | 5 | 50 @ 50 | 1 @ 5 | 100 @ 5 | Z11 |
| BZX84C2V7 | 2.7 | 2.5 | 2.9 | 5 | 20 @ 50 | 1 @ 5 | 100 @ 5 | Z12 |
| BZX84C3V0 | 3.0 | 2.8 | 3.2 | 5 | 10 @ 50 | 1 @ 5 | 95 @ 5 | Z13 |
| BZX84C3V3 | 3.3 | 3.1 | 3.5 | 5 | 5 @ 50 | 1 @ 5 | 95 @ 5 | Z14 |
| BZX84C3V6 | 3.6 | 3.4 | 3.8 | 5 | 5 @ 50 | 1 @ 5 | 90 @ 5 | Z15 |
| BZX84C3V9 | 3.9 | 3.7 | 4.1 | 5 | 3 @ 50 | 1 @ 5 | 90 @ 5 | Z16 |
| BZX84C4V3 | 4.3 | 4.0 | 4.6 | 5 | 3 @ 50 | 1 @ 5 | 90 @ 5 | Z17 |
| BZX84C4V7 | 4.7 | 4.4 | 5.0 | 5 | 3 @ 50 | 2 @ 50 | 80 @ 5 | Z1 |
| BZX84C5V1 | 5.1 | 4.8 | 5.4 | 5 | 2 @ 50 | 2 @ 50 | 60 @ 5 | Z2 |
| BZX84C5V6 | 5.6 | 5.2 | 6.0 | 5 | 1 @ 50 | 2 @ 50 | 40 @ 5 | Z3 |
| BZX84C6V2 | 6.2 | 5.8 | 6.6 | 5 | 3 @ 50 | 4 @ 50 | 10 @ 5 | Z4 |
| BZX84C6V8 | 6.8 | 6.4 | 7.2 | 5 | 2 @ 50 | 4 @ 50 | 15 @ 5 | Z5 |
| BZX84C7V5 | 7.5 | 7.0 | 7.9 | 5 | 1 @ 50 | 5 @ 50 | 15 @ 5 | Z6 |
| BZX84C8V2 | 8.2 | 7.7 | 8.7 | 5 | 0.7 @ 50 | 5 @ 50 | 15 @ 5 | Z7 |
| BZX84C9V1 | 9.1 | 8.5 | 9.6 | 5 | 0.5 @ 50 | 6 @ 50 | 15 @ 5 | Z8 |
| BZX84C10 | 10 | 9.4 | 10.6 | 5 | 0.2 @ 50 | 7 @ 50 | 20 @ 5 | Z9 |
| BZX84C11 | 11 | 10.4 | 11.6 | 5 | 0.1 @ 50 | 8 @ 50 | 20 @ 5 | Y1 |
| BZX84C12 | 12 | 11.4 | 12.7 | 5 | 0.1 @ 50 | 8 @ 50 | 25 @ 5 | Y2 |
| BZX84C13 | 13 | 12.4 | 14.1 | 5 | 0.1 @ 50 | 8 @ 50 | 30 @ 5 | Y3 |
| BZX84C15 | 15 | 13.8 | 15.6 | 5 | 0.05 @ 50 | 10.5 @ 50 | 30 @ 5 | Y4 |
| BZX84C16 | 16 | 15.3 | 17.1 | 5 | 0.05 @ 50 | 11.2 @ 50 | 40 @ 5 | Y5 |
| BZX84C18 | 18 | 16.8 | 19.1 | 5 | 0.05 @ 50 | 12.6 @ 50 | 45 @ 5 | Y6 |
| BZX84C20 | 20 | 18.8 | 21.2 | 5 | 0.05 @ 50 | 14.0 @ 50 | 55 @ 5 | Y7 |
| BZX84C22 | 22 | 20.8 | 23.3 | 5 | 0.05 @ 50 | 15.4 @ 50 | 55 @ 5 | Y8 |
| BZX84C24 | 24 | 22.8 | 25.6 | 5 | 0.05 @ 50 | 16.8 @ 50 | 70 @ 5 | Y9 |
| BZX84C27 | 27 | 25.1 | 28.9 | 2 | 0.05 @ 27 | 18.9 @ 20 | 80 @ 2 | Y10 |
| BZX84C30 | 30 | 28.0 | 32.0 | 2 | 0.05 @ 30 | 21.0 @ 20 | 80 @ 2 | Y11 |
| BZX84C33 | 33 | 31.0 | 35.0 | 2 | 0.05 @ 33 | 23.1 @ 20 | 80 @ 2 | Y12 |
| BZX84C36 | 36 | 34.0 | 38.0 | 2 | 0.05 @ 36 | 25.2 @ 20 | 90 @ 2 | Y13 |
| BZX84C39 | 39 | 37.0 | 41.0 | 2 | 0.05 @ 39 | 27.3 @ 20 | 130 @ 2 | Y14 |
| BZX84C43 | 43 | 40.0 | 46.0 | 2 | 0.05 @ 43 | 30.1 @ 20 | 150 @ 2 | Y15 |
| BZX84C47 | 47 | 44.0 | 50.0 | 2 | 0.05 @ 47 | 32.9 @ 20 | 170 @ 2 | Y16 |
| BZX84C51 | 51 | 48.0 | 54.0 | 2 | 0.05 @ 51 | 35.7 @ 20 | 180 @ 2 | Y17 |
| BZX84C56 | 56 | 52.0 | 60.0 | 2 | 0.05 @ 56 | 39.2 @ 20 | 200 @ 2 | Y18 |
| BZX84C62 | 62 | 58.0 | 66.0 | 2 | 0.05 @ 62 | 43.4 @ 20 | 215 @ 2 | Y19 |
| BZX84C68 | 68 | 64.0 | 72.0 | 2 | 0.05 @ 68 | 47.6 @ 20 | 240 @ 2 | Y20 |
| BZX84C75 | 75 | 70.0 | 79.0 | 2 | 0.05 @ 75 | 52.5 @ 20 | 255 @ 2 | Y21 |
2601061900_FOSAN-BZX84C4V3_C2926228.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
