power switching diode FUXINSEMI STTH112A-FS featuring ultrafast recovery and low losses in power electronics systems
Key Attributes
Model Number:
STTH112A-FS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Reverse Leakage Current (Ir):
5uA@1200V
Reverse Recovery Time (trr):
75ns
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
1.9V@1A
Current - Rectified:
1A
Mfr. Part #:
STTH112A-FS
Package:
SMA(DO-214AC)
Product Description
Product Overview
The STTH112A-FS is a high-performance ultrafast recovery diode designed for efficient power switching applications. It offers a low forward voltage drop and excellent surge current capabilities, making it suitable for use in switch mode power supplies, DC-to-DC converters, and other power electronics systems where fast switching and low losses are critical.
Product Attributes
- Brand: STMicroelectronics
- Package Type: TO-220FP
Technical Specifications
| Specification | Value |
|---|---|
| Repetitive Peak Reverse Voltage (VRRM) | 1200 V |
| Average Forward Current (IF(AV)) | 10 A |
| Forward Voltage (VF) at IF = 10 A | 1.8 V (Max) |
| Reverse Current (IR) at VR = 1200 V | 10 A (Max) |
| Reverse Current (IR) at VR = 1200 V, Tj = 150 C | 1 mA (Max) |
| Junction Temperature (Tj) | 175 C |
| Storage Temperature (Tstg) | -65 C to +175 C |
| Peak Forward Surge Current (IFSM) at 10 ms | 100 A |
| Thermal Resistance Junction to Case (Rthj-c) | 1.7 C/W |
| Diode Capacitance (CD) at VR = 4 V, f = 1 MHz | 100 pF (Typ) |
| Switching Time (trr) at IF = 1 A, IR = 1 A, di/dt = 100 A/s | 25 ns (Typ) |
2512291555_FUXINSEMI-STTH112A-FS_C5563725.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
