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quality electronic diode FUXINSEMI MURA160T3G-FS with 1 amp forward current and 600 volts maximum reverse voltage factory
quality electronic diode FUXINSEMI MURA160T3G-FS with 1 amp forward current and 600 volts maximum reverse voltage factory

electronic diode FUXINSEMI MURA160T3G-FS with 1 amp forward current and 600 volts maximum reverse voltage

Key Attributes
Model Number: MURA160T3G-FS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
35A
Reverse Leakage Current (Ir):
5uA@4V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1.25V@1A
Current - Rectified:
1A
Mfr. Part #:
MURA160T3G-FS
Package:
SMA(DO-214AC)
Product Description

Product Overview

The MURA160T3G-FS is a high-performance diode designed for various electronic applications. It features a maximum continuous reverse voltage of 600V and a maximum repetitive peak reverse voltage of 600V, making it suitable for power rectification and voltage clamping circuits. With a maximum average forward rectified current of 1.0A and a low forward voltage drop, it ensures efficient operation. The device is compliant with Halogen-free standards and offers a wide operating junction temperature range from -65C to 175C.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Halogen-free compliant

Technical Specifications

Parameter Symbol Units Value (TA = 25C unless otherwise noted)
Maximum average forward rectified current IO A 1.0
Maximum instantaneous forward voltage at IF = 1.0A VF V 1.05
Maximum reverse leakage current at rated VR IR A 50
Maximum continuous reverse voltage VR V 600
Maximum repetitive peak reverse voltage VRRM V 600
Maximum RMS voltage VRMS V 420
Non-repetitive peak forward surge current 8.3ms single half sine-wave IFSM A 15
Typical junction capacitance (Note 1) CJ pF 15
Typical thermal resistance junction to ambient (Note 3) RJA C / W 55 to 175
Typical thermal resistance junction to case (Note 3) RJC C / W 1.25
Operating junction temperature range TJ C -65 to 175
Storage temperature range TSTG C -65 to 175
Maximum reverse recovery time (Note 2) trr ns 50
Maximum instantaneous forward voltage at IF = 1.0A VF V 1.25

Notes:

  1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
  2. Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A
  3. Mounted on FR-4 PCB Copper, minimum recommended pad layout

2512291555_FUXINSEMI-MURA160T3G-FS_C7503110.pdf

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