MJD31C transistor providing dependable performance in industrial linear and switching applications
Key Attributes
Model Number:
MJD31C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1mA
Pd - Power Dissipation:
40W
Transition Frequency(fT):
3MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
100V
Mfr. Part #:
MJD31C
Package:
TO-252
Product Description
MJD31C NPN Transistor
The MJD31C is an NPN transistor designed for linear and switching industrial applications. It offers complementary functionality to the MJD32C and is suitable for a wide range of industrial uses.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic-Encapsulate
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-Emitter Sustaining Voltage | VCEO(sus) | IC = 30mAIB = 0 | 100 | V |
| Collector cut-off current | ICEO | VCE =60VIE = 0 | 0.3 | mA |
| Emitter cut-off current | IEBO | VEB = 5VIE = 0 | 1 | mA |
| Collector cut-off current | ICES | VCE = 100VVBE = 0 | 0.2 | mA |
| DC current gain* | hFE | VCE= 4VIC= 1A | 25 | |
| DC current gain* | hFE | VCE= 4VIC= 3A | 10 | |
| Collector-emitter saturation voltage* | VCE(sat) | IC = 3AIB =375mA | 1.2 | V |
| Base-Emitter ON Voltage* | VBE (on) | VCE= 4VIC= 3A | 1.8 | V |
| Current Gain Bandwidth Product* | fT | VCE=10V, IC=500mA | 3.0 | MHz |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-Base Voltage | BVCBO | 100 | V |
| Collector-Emitter Voltage | BVCEO | 100 | V |
| Emitter-Base Voltage | BVEBO | 5 | V |
| Collector Current(DC) | IC | 3 | A |
| Collector peak current | ICM | 5 | A |
| Collector Dissipation (Ta =25 ) | PC | 2 | W |
| Collector Dissipation (Tc =25 ) | PC | 40 | W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature | Tstg | -65150 |
2504101957_GOODWORK-MJD31C_C46061580.pdf
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