Silicon Carbide Power MOSFET N Channel Enhancement Mode FUXINSEMI C2M0160120D for Power Applications
Key Attributes
Model Number:
C2M0160120D
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
196mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Input Capacitance(Ciss):
606pF
Pd - Power Dissipation:
125W
Output Capacitance(Coss):
55pF
Gate Charge(Qg):
40nC
Mfr. Part #:
C2M0160120D
Package:
TO-247-3
Product Description
Product Overview
The C2M0160120D is a Silicon Carbide Power MOSFET featuring N-Channel Enhancement Mode operation. Designed for high-performance power applications, it leverages the advantages of Silicon Carbide technology for improved efficiency and reliability.
Product Attributes
- Brand: Fuxinsemi
- Material: Silicon Carbide
- Type: N-Channel Enhancement Mode
- RoHS: Pb e3
Technical Specifications
| Part Number | Description |
| C2M0160120D | Silicon Carbide Power MOSFET, N-Channel Enhancement Mode |
2409302301_FUXINSEMI-C2M0160120D_C22365188.pdf
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