NPN Bipolar Transistor GOODWORK S9018 Suitable for High Frequency Signal Amplification and Switching

Key Attributes
Model Number: S9018
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
800MHz
Type:
NPN
Current - Collector(Ic):
50mA
Collector - Emitter Voltage VCEO:
15V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
S9018
Package:
SOT-23
Product Description

Product Overview

The S9018 is an NPN High Frequency Bipolar Transistor designed for various electronic applications. It offers reliable performance with key electrical characteristics suitable for signal amplification and switching.

Product Attributes

  • Brand: DEMACHEL
  • Type: S9018
  • Package: SOT-23
  • Marking: J8

Technical Specifications

Characteristic Symbol Rating Unit Min Type Max
Absolute Maximum Ratings
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 15 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 50 mA
Power Dissipation (Ta=25) PC 200 mW
Junction and Storage Temperature TJ, Tstg -55 to +150
Electrical Characteristics (TA=25 unless otherwise noted)
Collector-Base Breakdown Voltage (IC=100A, IE=0) BVCBO 30 V 30
Collector-Emitter Breakdown Voltage (IC=1mA, IB=0) BVCEO 15 V 15
Emitter-Base Breakdown Voltage (IE=100A, IC=0) BVEBO 5 V 5
Collector-Base Leakage Current (VCB=12V, IE=0) ICBO nA 50
Collector-Emitter Leakage Current (VCE=12V, IE=0) ICEO nA 100
Emitter-Base Leakage Current (VEB=3V, IC=0) IEBO nA 100
DC Current Gain (VCE=5V, IC=1mA) HFE 70 200
Collector-Emitter Saturation Voltage (IC=10mA, IB=1mA) VCE(sat) V 0.5
Base-Emitter Saturation Voltage (IC=10mA, IB=1mA) VBE(sat) V 1.4
Transition Frequency (VCE=5V, IC=5mA) fT MHz 800
Output Capacitance (VCB=5V, IE=0, f=1MHZ) Cob pF 1

2412061650_GOODWORK-S9018_C41371071.pdf

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