High Voltage Silicon Carbide Diode FUXINSEMI F4C10120A 1200 Volt TO220 Package for Power Electronics

Key Attributes
Model Number: F4C10120A
Product Custom Attributes
Reverse Leakage Current (Ir):
30uA@1.2kV
Voltage - DC Reverse (Vr) (Max):
1.2kV
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1.5V@10A
Current - Rectified:
33A
Mfr. Part #:
F4C10120A
Package:
TO-220-2
Product Description

Product Overview

The F4C10120A is a Silicon Carbide Schottky Diode designed for high-frequency operation and efficient power conversion. It features a 1.2kV rating, zero reverse recovery current, and temperature-independent switching, enabling higher efficiency and reduced heat sink requirements. This diode is ideal for replacing bipolar rectifiers in demanding applications such as Switch Mode Power Supplies (SMPS), boost diodes in PFC or DC/DC stages, free-wheeling diodes in inverter stages, and AC/DC converters. Its positive temperature coefficient on V allows for parallel device operation without thermal runaway.

Product Attributes

  • Brand: Fuxin Semiconductor
  • Material: Silicon Carbide (SiC)
  • Package: TO-220-2 (TO-220AC)
  • Certifications: Pb e3

Technical Specifications

Part Number Package Marking VRRM (V) VRSM (V) VR (V) IF Continuous (A) IFRM (A) IFSM (A) IF,Max (A) Ptot (W) dV/dt (V/ns) idt (As) TJ (C) Tstg (C) Mounting Torque (Nm lbf-in) RJC (C/W) VF Typ. (V) VF Max. (V) IR Typ. (A) IR Max. (A) QC Typ. (nC) C Typ. (pF) EC Typ. (J)
F4C10120A TO-220-2 C10120A 1200 1300 1200 33 (TC=25C), 16 (TC=135C), 10 (TC=156C) 47 (TC=25C, tP=10ms), 31.5 (TC=110C, tP=10ms) 71 (TC=25C, tP=10ms), 59.5 (TC=110C, tP=10ms) 750 (TC=25C, tP=10s), 620 (TC=110C, tP=10s) 166.5 (TC=25C), 72 (TC=110C) 200 25 (TC=25C, tP=10ms), 17.5 (TC=110C, tP=10ms) -55 to +175 -55 to +135 8.8 (M3 Screw 6-32) 0.9 1.5 (IF=10A, TJ=25C) 2.2 (IF=10A, TJ=175C) 30 (VR=1200V, TJ=25C) 250 (VR=1200V, TJ=175C) 52 (VR=800V, IF=10A, di/dt=200A/s, TJ=25C) 45 (VR=0V, TJ=25C, f=1MHz) 14.5 (VR=800V)

Note: This is a majority carrier diode, so there is no reverse recovery charge.


2103261833_FUXINSEMI-F4C10120A_C784611.pdf

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