high speed switching diode FUXINSEMI MMBD6100LT1G ideal for in switching and rectification circuits

Key Attributes
Model Number: MMBD6100LT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
5uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
1 Pair Common Cathode
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1V@10mA
Current - Rectified:
200mA
Mfr. Part #:
MMBD6100LT1G
Package:
SOT-23
Product Description

Product Overview

The MMBD6100LT1G is a high-speed switching diode designed for general-purpose applications. It is suitable for use in various electronic circuits requiring fast switching times.

Product Attributes

  • Brand: ON Semiconductor
  • Part Number: MMBD6100LT1G

Technical Specifications

Specification Value
Diode Type High Speed Switching Diode
Maximum Repetitive Reverse Voltage 75 V
Maximum RMS Reverse Voltage 53 V
Maximum DC Blocking Voltage 75 V
Maximum Average Forward Rectified Current 0.25 A
Peak Forward Surge Current 4 A
Maximum Forward Voltage @ Specified Current 1 V @ 100 mA
Maximum Reverse Leakage Current @ Specified Voltage 25 nA @ 75 V
Capacitance (Cd) @ Frequency 4 pF @ 50 MHz
Operating and Storage Junction Temperature Range -55 to +150 °C
Package Type SOT-23
Configuration Single Diode

2309041613_FUXINSEMI-MMBD6100LT1G_C7503109.pdf

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