high speed switching diode FUXINSEMI MMBD6100LT1G ideal for in switching and rectification circuits
Key Attributes
Model Number:
MMBD6100LT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
5uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
1 Pair Common Cathode
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1V@10mA
Current - Rectified:
200mA
Mfr. Part #:
MMBD6100LT1G
Package:
SOT-23
Product Description
Product Overview
The MMBD6100LT1G is a high-speed switching diode designed for general-purpose applications. It is suitable for use in various electronic circuits requiring fast switching times.
Product Attributes
- Brand: ON Semiconductor
- Part Number: MMBD6100LT1G
Technical Specifications
| Specification | Value |
|---|---|
| Diode Type | High Speed Switching Diode |
| Maximum Repetitive Reverse Voltage | 75 V |
| Maximum RMS Reverse Voltage | 53 V |
| Maximum DC Blocking Voltage | 75 V |
| Maximum Average Forward Rectified Current | 0.25 A |
| Peak Forward Surge Current | 4 A |
| Maximum Forward Voltage @ Specified Current | 1 V @ 100 mA |
| Maximum Reverse Leakage Current @ Specified Voltage | 25 nA @ 75 V |
| Capacitance (Cd) @ Frequency | 4 pF @ 50 MHz |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Package Type | SOT-23 |
| Configuration | Single Diode |
2309041613_FUXINSEMI-MMBD6100LT1G_C7503109.pdf
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.