Silicon Carbide Schottky Rectifier Diode FUXINSEMI F3C08065A 650 Volt TO220 Package for Motor Drives

Key Attributes
Model Number: F3C08065A
Product Custom Attributes
Reverse Leakage Current (Ir):
10uA@650V
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.5V@8A
Current - Rectified:
24A
Mfr. Part #:
F3C08065A
Package:
TO-220-2
Product Description

Product Overview

The F3C08065A is a 650-Volt Silicon Carbide Schottky Rectifier designed for high-frequency operation with zero reverse recovery current and zero forward recovery voltage. Its temperature-independent switching behavior and extremely fast switching capabilities offer higher efficiency and reduced heat sink requirements. This unipolar rectifier can replace bipolar rectifiers and allows for parallel device configurations without thermal runaway. It is ideal for applications such as Switch Mode Power Supplies, Power Factor Correction, and Motor Drives.

Product Attributes

  • Brand: Fuxin Semiconductor (implied by domain www.fuxinsemi.com)
  • Material: Silicon Carbide (SiC)
  • Diode Type: Schottky Rectifier
  • Package Type: TO-220-2 (TO-220AC)
  • Certifications: Pb e3 (RoHS compliance implied)

Technical Specifications

Part Number Package Marking VRRM (V) VRSM (V) VDC (V) IF (A) TC=25C IF (A) TC=135C IF (A) TC=152C Ptot (W) TC=25C Ptot (W) TC=110C TJ, Tstg (C) VF (V) IF=8A TJ=25C (Typ.) VF (V) IF=8A TJ=175C (Typ.) IR (A) VR=650V TJ=25C (Typ.) IR (A) VR=650V TJ=175C (Typ.) QC (nC) VR=650V, IF=8A di/dt=500A/s TJ=25C (Typ.) C (pF) VR=0V, TJ=25C, f=1MHz (Typ.) C (pF) VR=200V, TJ=25C, f=1MHz (Typ.) C (pF) VR=400V, TJ=25C, f=1MHz (Typ.) EC (J) VR=400V (Typ.) RJC (C/W) (Typ.)
F3C08065A TO-220-2 C08065A 650 650 650 24 11 8 107 46.5 -55 to +175 1.5 1.8 10 51 20 395 37 32 3.0 1.4

Note: This is a majority carrier diode, so there is no reverse recovery charge.

Package Dimensions (TO-220-2/TO-220AC): See detailed dimensions in the provided specification table.

Mounting Torque: M3 Screw: 1 Nm (8.8 lbf-in); 6-32 Screw: 1 Nm (8.8 lbf-in)


2409302301_FUXINSEMI-F3C08065A_C784607.pdf

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