10A High Barrier Power Schottky Rectifier FUXINSEMI MBR10200FCT Silicon Epitaxial Planar Chip Device

Name: 10A High Barrier Power Schottky Rectifier FUXINSEMI MBR10200FCT Silicon Epitaxial Planar Chip Device
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MBR10200FCT
Availability: InStock

Key Attributes

Model Number: MBR10200FCT

Product Custom Attributes

Reverse Leakage Current (Ir):

50uA@200V

Operating Junction Temperature Range:

-55℃~+175℃

Voltage - DC Reverse (Vr) (Max):

200V

Diode Configuration:

1 Pair Common Cathode

Voltage - Forward(Vf@If):

920mV@5A

Current - Rectified:

10A

Mfr. Part #:

MBR10200FCT

Package:

TO-220F

Product Description

Product Overview

The MBR10xxxFCT series are 10A High Barrier Power Schottky Rectifiers designed for high efficiency and low power loss applications. These rectifiers offer high current and surge capabilities, protected by an integrated guardring for overvoltage protection. Featuring a silicon epitaxial planar chip with a metal silicon junction and low stored charge, they are ideal for various power rectification needs.

Product Attributes

Brand: Fuxinsemiconductor
Series: MBR10xxxFCT
Chip Technology: Silicon epitaxial planar chip, metal silicon junction
Case Material: JEDEC ITO-220AB molded plastic body over passivated chip
Flame Retardant Rating: UL94-V0
Lead Solderability: MIL-STD-202, Method 208 guaranteed
Environmental Standards: Lead-free parts meet MIL-STD-19500 /228
Halogen-free Option: Suffix "-H" indicates Halogen-free parts (e.g., MBR1040FCT-H)

Technical Specifications

Symbol	Description	MBR1040FCT	MBR1045FCT	MBR1050FCT	MBR1060FCT	MBR1080FCT	MBR10100FCT	MBR10150FCT	MBR10200FCT
V_RRM	Peak Reverse Voltage (V)	40	45	50	60	80	100	150	200
V_RSM	Peak Repetitive Surge Voltage (V)	45	50	55	65	85	105	155	205
V_CBO	Peak Blocking Voltage (V)	40	45	50	60	80	100	150	200
I_F(AV)	Average Rectified Current (A)	10
I_FSM	Peak Forward Surge Current (A)	150 (1/2 wave, 50% duty cycle, 60Hz)
V_F	Max Forward Voltage (V)	0.70 (at 10A, T_J=25C)
I_R	Max Reverse Current (A)	50 (at V_R=rated, T_J=25C)
R_JC	Thermal Resistance Junction to Case (C/W)	0.80
T_J, T_STG	Operating & Storage Temperature Range (C)	-55 to +150

Package Information

Package	Tube Size (m/m)	Pieces per Tube	Box Size (m/m)	Pieces per Box	Carton Size (m/m)	Pieces per Carton	Approx. Gross Weight (kg)
ITO-220AB	502532*7.0	1,000	55515040	5,000	580230175	-	15.0

Mechanical Data

Dimension	Inches	Millimeters
Length (Body)	0.571 - 0.649	14.5 - 16.5
Width (Body)	0.374 - 0.413	9.5 - 10.5
Diameter (Lead)	0.032 MAX	0.8 MAX
Length (Lead)	0.512 MAX	13.0 MAX
Height (Component)	0.118 - 0.134	3.0 - 3.4
Mounting Hole Diameter	0.161 MAX	4.1 MAX
Spacing (Lead)	0.099 - 0.130	2.5 - 3.3
Width (Heatsink)	0.165 - 0.189	4.2 - 4.8
Width (Base)	0.248 - 0.287	6.3 - 7.3

Pinning Information

Pin	Description
PIN 1	Anode
PIN 2	Cathode
PIN 3	Anode

Marking Information

Type Number	Marking Code
MBR1040FCT	MBR1040FCT
MBR1045FCT	MBR1045FCT
MBR1050FCT	MBR1050FCT
MBR1060FCT	MBR1060FCT
MBR1080FCT	MBR1080FCT
MBR10100FCT	MBR10100FCT
MBR10150FCT	MBR10150FCT
MBR10200FCT	MBR10200FCT

Soldering Profile

Lead-free temperature profile wave-soldering:

Preheat Max gradient: 2C/s
Peak Max well time: 5 seconds
Max Cool Down gradient: -4C/s
Suggested gradient: 2C/s or less
Peak soldering temperature not to exceed 260C

2409291603_FUXINSEMI-MBR10200FCT_C842799.pdf

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