Semiconductor rectifier diode FUXINSEMI MURS160BJ-F with fast recovery time and halogen free compliance
Product Overview
The MURS160BJ is a semiconductor component designed for general-purpose rectification. It features a high repetitive peak reverse voltage and a fast reverse recovery time, making it suitable for various electronic applications requiring efficient current control. This component is compliant with Halogen-free standards.
Product Attributes
- Certification: Halogen-free Compliant
Technical Specifications
Maximum ratings (AT TA =25 °C unless otherwise noted)
| PARAMETER | SYMBOLS | UNITS | VALUE |
|---|---|---|---|
| Maximum average forward rectified current | IO | A | 1.0 |
| Maximum instantaneous forward voltage at IF = 1.0 A | VF | V | 1.25 |
| Maximum continuous reverse voltage | VR | V | 600 |
| Maximum repetitive peak reverse voltage | VRRM | V | 600 |
| Maximum RMS voltage | VRMS | V | 420 |
| Non-repetitive peak forward surge current 8.3ms single half sine-wave | IFSM | A | 15 |
| Storage temperature range | TSTG | °C | -65 to 175 |
| Operating junction temperature range | TJ | °C | -65 to 175 |
| Typical thermal resistance junction to ambient (Note 3) | RθJA | °C / W | 55 to 175 |
| Typical thermal resistance junction to case (Note 3) | RθJC | °C / W | 25 |
| Typical junction capacitance (Note 1) | CJ | pF | 15 |
Electrical characteristics (AT TA =25 °C unless otherwise noted)
| PARAMETER | SYMBOLS | UNITS | VALUE |
|---|---|---|---|
| Maximum reverse leakage current at rated VR | IR | μA | 1.0 |
| Maximum instantaneous forward voltage at IF = 1.0 A | VF | V | 1.05 |
| Maximum reverse recovery time (Note 2) | trr | ns | 50 |
Notes:
- 1: Measured at 1 MHz and applied reverse voltage of 4.0 VDC
- 2: Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A
- 3: Mounted on FR-4 PCB Copper, minimum recommended pad layout
Model: MURS160BJ
Package: SMB/DO-214AA
2310191804_FUXINSEMI-MURS160BJ-F_C18723421.pdf
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