Silicon Carbide Power MOSFET N Channel Enhancement Mode FUXINSEMI C3M0016120D for power applications
Key Attributes
Model Number:
C3M0016120D
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
115A
Operating Temperature -:
-40℃~+175℃
RDS(on):
22.3mΩ
Gate Threshold Voltage (Vgs(th)):
3.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Output Capacitance(Coss):
230pF
Pd - Power Dissipation:
556W
Input Capacitance(Ciss):
6.085nF
Gate Charge(Qg):
207nC
Mfr. Part #:
C3M0016120D
Package:
TO-247-3
Product Description
Product Overview
The C3M0016120D is a Silicon Carbide Power MOSFET with N-Channel Enhancement Mode. It is designed for high-performance power applications.
Product Attributes
- Brand: Fuxinsemi
- Material: Silicon Carbide
- Type: N-Channel Enhancement Mode
Technical Specifications
| Part Number | Description |
| C3M0016120D | Silicon Carbide Power MOSFET, N-Channel Enhancement Mode |
2409302301_FUXINSEMI-C3M0016120D_C22365193.pdf
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