NPN transistor GOODWORK G1-MMBT5551 designed for performance in amplification and switching circuits
Key Attributes
Model Number:
G1-MMBT5551
Product Custom Attributes
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
G1-MMBT5551
Package:
SOT-23
Product Description
MMBT5551 NPN TRANSISTOR
The MMBT5551 is an NPN transistor, complementary to the MMBT5401, designed for medium power amplification and switching applications. It offers reliable performance for various electronic circuits.
Product Attributes
- Marking Type Number: MMBT5551
- Marking Code: G1
Technical Specifications
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| VCBO | CollectorBase Voltage | 180 | V | |||
| VCEO | CollectorEmitter Voltage | 160 | V | |||
| VEBO | EmitterBase Voltage | 6 | V | |||
| IC | Collector Current Continuous | 600 | mA | |||
| PC | Collector Power Dissipation | 300 | mW | |||
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55 | +150 | |||
| RthJA | Thermal Resistance From Junction To Ambient | 416 | /W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC = 100uA, IE = 0 | 180 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 1 mA, IB = 0 | 160 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE = 10uA, IC = 0 | 6 | V | ||
| ICBO | Collector cut-off current | VCB = 120V, IE = 0 | 50 | nA | ||
| IEBO | Emitter cut-off current | VEB = 4V, IC =0 | 50 | nA | ||
| hFE1 | DC current gain | VCE = 5V, IC =10mA | 100 | |||
| hFE2 | DC current gain | VCE = 5V, IC=10mA | 300 | |||
| hFE3 | DC current gain | VCE = 5V, IC = 50mA | 300 | |||
| VCE(sat)1 | Collector-emitter saturation voltage | IC = 10mA, IB = 1mA | 0.15 | V | ||
| VCE(sat)2 | Collector-emitter saturation voltage | IC = 50mA, IB = 5mA | 0.2 | V | ||
| VBE(sat)1 | Base-emitter saturation voltage | IC = 10mA, IB = 1mA | 0.6 | V | ||
| VBE(sat)2 | Base-emitter saturation voltage | IC = 50mA, IB = 5mA | 0.77 | V | ||
| Cob | Collector output capacitance | VCB = 10V, IE = 0, f=1MHz | 10 | pF | ||
| fT | Transition frequency | VCE = 10V, IC = 10mA, f=100MHz | 50 | MHz | ||
hFE Classification
| Rank | Range |
| L | 100-200 |
| H | 200-300 |
2410121850_GOODWORK-G1-MMBT5551_C5807901.pdf
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