Electromagnetic Interference Resistant SCR FUXINSEMI BT169D Suitable for AC Motor Speed Regulation
Product Overview
The BT169D Series are 0.8A sensitive gate SCRs designed for applications requiring high shock loading capability and strong resistance to electromagnetic interference. They offer a high dv/dt rate and are suitable for power chargers, T-tools, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: FS
- Origin: www.fuxinsemi.com
- Package: TO-92
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Condition | Min | Max |
| VDRM | Repetitive peak off-state voltage | 600 / 800 | V | |||
| VRRM | Repetitive peak reverse voltage | 600 / 800 | V | |||
| IT(RMS) | RMS on-state current | 0.8 | A | |||
| ITSM | Non repetitive surge peak on-state current (full cycle, F=50Hz) | 8 | A | |||
| I2t | I2t value for fusing (tp=10ms) | 0.32 | A2s | |||
| dIT/dt | Critical rate of rise of on-state current (IG =2IGT) | 50 | A/s | |||
| IGM | Peak gate current | 1 | A | |||
| PG(AV) | Average gate power dissipation | 0.1 | W | |||
| TJ | Junction Temperature | -40 ~ +110 | ||||
| TSTG | Storage Temperature | -40 ~ +150 | ||||
| IGT | Gate trigger current | 10 | A | VD =12V IT=10mA Tj =25 | 200 | |
| VGT | Gate trigger voltage | V | 0.8 | |||
| VGD | Gate non-trigger voltage | 0.2 | V | VD =1/2VDRM Tj =110 | ||
| IL | Latching current | mA | VD =12V IG=0.5mA RGK=1k Tj =25 | 3 | ||
| IH | Holding current | mA | 4 | |||
| dVD/dt | Critical-rate of rise of commutation voltage | 10 | V/s | VD=2/3VDRM Gate Open Tj =110 | ||
| VTM | Forward "on" voltage | V | ITM =1.2A tp=380s | 1.5 | ||
| IDRM | Repetitive Peak Off-State Current | A | VD =VDRM VR =VRRM Tj=25 | 5 | ||
| IRRM | Repetitive Peak Reverse Current | mA | Tj=110 | 0.1 | ||
| Rth(j-c) | Junction to case | 60 | /W | TYP. | ||
| Rth(j-a) | Junction to ambient | 150 | /W | TYP. |
2409300133_FUXINSEMI-BT169D_C784598.pdf
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