High dvdt Rate SCR FUXINSEMI X0405C 4 Amp RMS Current Designed for Motor Speed Control and Massagers
Key Attributes
Model Number:
X0405C
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
200uA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
200mW
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
30A@50Hz
SCR Type:
-
Operating Temperature:
-
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
X0405C
Package:
TO-126-3
Product Description
Product Overview
The X0405C is a 4.0A sensitive gate SCR designed for applications requiring high shock loading capability and strong resistance to electromagnetic interference. Its features include a high dv/dt rate, making it suitable for power chargers, T-tools, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: FS
- Package: TO-126
- Marking Symbol: X040 XXXX 5MF
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit | Min | Max |
| Repetitive peak off-state voltage | VDRM | 600 / 800 | V | |||
| Repetitive peak reverse voltage | VRRM | 600 / 800 | V | |||
| RMS on-state current | IT(RMS) | 4 | A | |||
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 30 | A | |||
| I2t value for fusing (tp=10ms) | I2t | 4.5 | A2s | |||
| Critical rate of rise of on-state current (IG =2IGT) | dIT/dt | 50 | A/s | |||
| Peak gate current | IGM | 1.2 | A | |||
| Average gate power dissipation | PG(AV) | 0.2 | W | |||
| Junction Temperature | TJ | -40 ~ +110 | ||||
| Storage Temperature | TSTG | -40 ~ +150 | ||||
| Gate trigger current | IGT | VD =12V RL=140 Tj =25 | A | 10 | 200 | |
| Gate trigger voltage | VGT | V | 0.8 | |||
| Gate non-trigger voltage | VGD | VD =VDRM RGK=1k Tj =110 | V | 0.2 | ||
| Latching current | IL | IG=1mA RGK=1k Tj =25 | mA | 6 | ||
| Holding current | IH | IT=50mA RGK=1k Tj =25 | mA | 5 | ||
| Critical-rate of rise of commutation voltage | dVD/dt | VD=2/3VDRM RGK=1k Tj =110 | V/s | 10 | ||
| Forward "on" voltage | VTM | ITM =8A tp=380s | V | 1.55 | ||
| Repetitive Peak Off-State Current | IDRM | VD =VDRM Tj=25 | A | 5 | ||
| Repetitive Peak Reverse Current | IRRM | VR =VRRM Tj=110 | mA | 0.15 | ||
| Junction to case (AC) Thermal Resistance | Rth(j-c) | TYP. | 7.2 | /W | ||
| Junction to ambient Thermal Resistance | Rth(j-a) | TYP. | 100 | /W |
2205161616_FUXINSEMI-X0405C_C3018489.pdf
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