Medium Power Amplification Transistor GOODWORK MMDT5401 Plastic Encapsulate Type with Small Surface Mount Package

Key Attributes
Model Number: MMDT5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Transition Frequency(fT):
100MHz
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Mfr. Part #:
MMDT5401
Package:
SOT-363
Product Description

MMDT5401 Plastic-Encapsulate Transistors

The MMDT5401 is a complementary transistor to the MMDT5551DW, designed for medium power amplification and switching applications. It features a small surface mount package, making it ideal for space-constrained designs.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Plastic-Encapsulate
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

SymbolParameterTest conditionsMinTypMaxUnit
V(BR)CBOCollector-base breakdown voltageIC=-100A, IE=0-160V
V(BR)CEOCollector-emitter breakdown voltageIC=-1mA, IB=0-150V
V(BR)EBOEmitter-base breakdown voltageIE=-10A, IC=0-5V
ICBOCollector cut-off currentVCB=-120V, IE=0-50nA
IEBOEmitter cut-off currentVEB=-3V, IC=0-50nA
hFEDC current gainVCE=-5V, IC=-1mA50
VCE=-5V, IC=-10mA60
VCE=-5V, IC=-50mA300
VCE(sat)Collector-emitter saturation voltageIC=-50mA, IB=-5mA-0.5V
IC=-10mA, IB=-1mA-0.2
IC=-50mA, IB=-5mA-1
VBE(sat)Base-emitter saturation voltageIC=-10mA, IB=-1mA-1V
IC=-50mA, IB=-5mA-1
fTTransition frequencyVCE=-10V,IC=-10mA , f=100MHz100MHz
CobCollector output capacitanceVCB=-10V, IE=0, f=1MHz6pF

Maximum Ratings

SymbolParameterValueUnit
VCBOCollector-Base Voltage-160V
VCEOCollector-Emitter Voltage-150V
VEBOEmitter-Base Voltage-5V
ICCollector Current-600mA
PCCollector Power Dissipation300mW
RJAThermal Resistance From Junction To Ambient625/W
TjJunction Temperature150
TstgStorage Temperature-55+150

2506251635_GOODWORK-MMDT5401_C49242202.pdf

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