General purpose NPN transistor GOODWORK S8050T suitable for multiple electronic circuit applications
Key Attributes
Model Number:
S8050T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
S8050T
Package:
SOT-523
Product Description
Product Overview
The S8050T is an NPN transistor designed for general-purpose applications. It offers reliable performance with key electrical characteristics suitable for various electronic circuits.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Test Conditions | MIN | TYP | MAX | Units |
| V(BR)CBO | Collector-base breakdown voltage | IC= 100A, IE=0 | 40 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC=1mA, IB=0 | 25 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=100A, IC=0 | 5 | V | ||
| ICBO | Collector cut-off current | VCB=40 V, IE=0 | 0.1 | A | ||
| ICEO | Collector cut-off current | VCB=20V, IE=0 | 0.1 | A | ||
| IEBO | Emitter cut-off current | VEB= 5V, IC=0 | 0.1 | A | ||
| HFE(1) | DC current gain | VCE=1V, IC= 50mA | 120 | 400 | ||
| HFE(2) | DC current gain | VCE=1V, IC= 500mA | 50 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC=500 mA, IB= 50mA | 0.6 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC=500 mA, IB=50mA | 1.2 | V | ||
| fT | Transition frequency | VCE=6V, IC= 20mA f=30MHz | 150 | MHz |
2508261540_GOODWORK-S8050T_C50581512.pdf
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