silicon transistor GOODWORK S9012 PNP type suitable for switching and amplification circuit designs

Key Attributes
Model Number: S9012
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
S9012
Package:
SOT-23
Product Description

Product Overview

The S9012 is a general-purpose PNP silicon transistor designed for various electronic applications. It offers high collector current capabilities and is complementary to the S9013 transistor. The S9012 exhibits excellent hFE linearity, making it suitable for a wide range of amplification and switching circuits.

Product Attributes

  • Brand: DEMACHEL
  • Type: S9012
  • Material: Silicon
  • Package: SOT-23

Technical Specifications

CharacteristicSymbolMinMaxUnitNotes
Maximum RatingsVCEO-25Vdc
VCBO-40Vdc
VEBO-5.0Vdc
IC (Continuous)-500mAdc
PD (Total Device Dissipation @ TA = 25C)PD300mWFR5 Board
Electrical Characteristics (TA = 25C)V(BR)CEO-25VdcIC = -1.0 mAdc, IB = 0
V(BR)CBO-40VdcIC = -0.1 mAdc, IE = 0
V(BR)EBO-5.0VdcIE = -0.1 mAdc, IC = 0
Off CharacteristicsICBO-0.1uAdcVCB= -40 Vdc, IE = 0
IECO-0.1uAdcVCE = 20 Vdc, IB = 0
IEBO-0.1uAdcVEB = -5 Vdc, IC = 0
On CharacteristicshFE (IC =-50 mAdc, VCE =-1 Vdc)120-400
VCE(sat) (IC = -500 mAdc, IB = -50 mAdc)-0.6Vdc
VBE(sat) (IC = -500 mAdc, IB = -50 mAdc)-1.2Vdc
Small-Signal CharacteristicsfT (IC = -20mAdc, VCE= -6.0Vdc)150MHzf =30MHz

2410122011_GOODWORK-S9012_C909748.pdf

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