Surface Mount Silicon Planar Zener Diode GOODWORK BZT52C2V7 with Molded Plastic Case and Flame Retardant Epoxy
Key Attributes
Model Number:
BZT52C2V7
Product Custom Attributes
Impedance(Zzt):
100Ω
Diode Configuration:
Independent
Zener Voltage(Range):
2.5V~2.9V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
2.7V
Impedance(Zzk):
600Ω
Mfr. Part #:
BZT52C2V7
Package:
SOD-123
Product Description
Product Overview
The BZT52C2V0 THRU BZT52C75 series are silicon planar Zener diodes designed for surface mount applications. They offer high temperature soldering capabilities and are easy for pick-and-place assembly. Ideal for a wide range of voltage regulation applications.
Product Attributes
- Case: Molded plastic
- Epoxy: UL 94V-0 rate flame retardant
- Construction: Metallurgically bonded
- Polarity: Color band denotes cathode end
- Mounting Position: Any
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Power Dissipation | Ptot | 500 | mW | Ta = 25 |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature Range | Tstg | -65 to +150 | ||
| Thermal Resistance Junction to Ambient Air | RthA | 340 | /W | Ta = 25 |
| Forward Voltage at IF = 10 mA | VF | 0.9 | V | Ta = 25 |
| Type | Zener Voltage Range (Nominal V) | Test Current (IZT) | Zener Voltage (VZT at IZT) | Maximum Zener Impedance (ZZT@IZT) | Reverse Current (IR at VR) | IZT |
| Min (V) | Max (V) | (mA) | () | (A) | (mA) | |
| BZT52C2V0 | 2.0 | 2.09 | 5 | 600 | 150 | 1 |
| BZT52C2V4 | 2.4 | 2.6 | 5 | 600 | 50 | 1 |
| BZT52C2V7 | 2.7 | 2.9 | 5 | 600 | 20 | 1 |
| BZT52C3V0 | 3.0 | 3.2 | 5 | 600 | 10 | 1 |
| BZT52C3V3 | 3.3 | 3.5 | 5 | 600 | 5.0 | 1 |
| BZT52C3V6 | 3.6 | 3.8 | 5 | 600 | 5.0 | 1 |
| BZT52C3V9 | 3.9 | 4.1 | 5 | 600 | 3.0 | 1 |
| BZT52C4V3 | 4.3 | 4.6 | 5 | 600 | 3.0 | 1 |
| BZT52C4V7 | 4.7 | 5 | 5 | 500 | 3.0 | 1 |
| BZT52C5V1 | 5.1 | 5.4 | 5 | 480 | 2.0 | 1 |
| BZT52C5V6 | 5.6 | 6 | 5 | 400 | 1.0 | 1 |
| BZT52C6V2 | 6.2 | 6.6 | 5 | 150 | 3.0 | 1 |
| BZT52C6V8 | 6.8 | 7.2 | 5 | 80 | 2.0 | 1 |
| BZT52C7V5 | 7.5 | 7.9 | 5 | 80 | 1.0 | 1 |
| BZT52C8V2 | 8.2 | 8.7 | 5 | 80 | 0.7 | 1 |
| BZT52C9V1 | 9.1 | 9.6 | 5 | 100 | 0.5 | 1 |
| BZT52C10 | 10 | 10.6 | 5 | 150 | 0.2 | 1 |
| BZT52C11 | 11 | 11.6 | 5 | 150 | 0.1 | 1 |
| BZT52C12 | 12 | 12.7 | 5 | 150 | 0.1 | 1 |
| BZT52C13 | 13 | 14.1 | 5 | 170 | 0.1 | 1 |
| BZT52C15 | 15 | 15.6 | 5 | 200 | 0.1 | 1 |
| BZT52C16 | 16 | 17.1 | 5 | 200 | 0.1 | 1 |
| BZT52C18 | 18 | 19.1 | 5 | 225 | 0.1 | 1 |
| BZT52C20 | 20 | 21.2 | 5 | 225 | 0.1 | 1 |
| BZT52C22 | 22 | 23.3 | 5 | 250 | 0.1 | 1 |
| BZT52C24 | 24 | 25.6 | 5 | 250 | 0.1 | 1 |
| BZT52C27 | 27 | 28.9 | 5 | 300 | 0.1 | 0.5 |
| BZT52C30 | 30 | 32 | 5 | 300 | 0.1 | 0.5 |
| BZT52C33 | 33 | 35 | 5 | 325 | 0.1 | 0.5 |
| BZT52C36 | 36 | 38 | 5 | 350 | 0.1 | 0.5 |
| BZT52C39 | 39 | 41 | 5 | 350 | 0.1 | 0.5 |
| BZT52C43 | 43 | 46 | 5 | 500 | 1 | 1 |
| BZT52C47 | 47 | 50 | 5 | 500 | 1 | 1 |
| BZT52C51 | 51 | 54 | 5 | 500 | 1 | 1 |
| BZT52C56 | 56 | 60 | 5 | 500 | 1 | 1 |
| BZT52C62 | 62 | 66 | 5 | 500 | 1 | 1 |
| BZT52C68 | 68 | 72 | 5 | 500 | 1 | 1 |
| BZT52C75 | 75 | 79 | 5 | 500 | 1 | 1 |
2505291110_GOODWORK-BZT52C2V7_C2932734.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
