Surface Mount P Channel MOSFET GOODWORK 3139K GK Optimized for Battery Management and Logic Switching
Key Attributes
Model Number:
3139K-GK
Product Custom Attributes
Drain To Source Voltage:
20V
RDS(on):
420mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
610mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 P-Channel
Pd - Power Dissipation:
150mW
Input Capacitance(Ciss):
113pF
Output Capacitance(Coss):
15pF
Mfr. Part #:
3139K-GK
Package:
SOT-523
Product Description
Product Overview
The 3139K is a P-Channel MOSFET designed for surface mount applications. It features low RDS(on) and operates at low logic level gate drive, making it suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. This P-Channel switch offers efficient performance for various power management tasks.
Product Attributes
- Marking: 39K
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| RDS(on)MAX | RDS(on) | @-4.5V | 510 | m | ||
| @-2.5V | 750 | m | ||||
| @(TYP)@-1.8V | 960 | m | ||||
| ID | ID | -0.75 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | -0.75 | A | |||
| Pulsed Drain Current | IDM | (1) | -1.2 | A | ||
| Power Dissipation | PD | (2) | 150 | mW | ||
| Thermal Resistance Junction to Ambient | RJA | (1) | 833 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-20V,VGS = 0V | -1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±10V, VDS = 0V | ±20 | µA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -0.35 | -0.61 | -1.1 | V |
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-1A | 420 | 510 | m | |
| VGS =-2.5V, ID =-0.8A | 630 | 750 | V | |||
| VGS =-1.8V, ID =-0.5A | 960 | |||||
| Forward tranconductance | gFS | VDS =-10V, ID =-0.54A | 0.8 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =-16V,VGS =0V,f =1MHz | 113 | pF | ||
| Output Capacitance | Coss | 15 | ||||
| Reverse Transfer Capacitance | Crss | 9 | ||||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 | 9 | ns | ||
| Turn-on rise time | tr | 5.7 | ||||
| Turn-off delay time | td(off) | 32.6 | ||||
| Turn-off fall time | tf | 20.3 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode forward voltage | VSD | IS=-0.5A, VGS = 0V | -1.2 | V | ||
2506241550_GOODWORK-3139K-GK_C49247884.pdf
Related Products
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
